Datasheet > NTB004N10G

NTB004N10G

更新时间： 2023-09-03 20:32:46

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	213K
描述
Power MOSFET 201 Amps, 100 Volts N-Channel Enhancement - Mode D2PAK

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NTB004N10G 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power,

N-Channel

100 V, 4.2 mW, 201 A

MAX

DS(ON)

(Note 1)

(BR)DSS

100 V

4.2 mW @ 10 V

201 A

NTB004N10G

N−Channel

Features

• Low R

DS(on)

• High Current Capability

• Wide SOA

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Hot Swap in 48 V Systems

MAXIMUM RATINGS (T = 25°C Unless otherwise specified)

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Symbol

Value

100

Unit

D PAK

DSS

CASE 418AJ

STYLE 2

$20

201

Continuous Drain

Current R

Steady

State

= 25°C

= 100°C

= 25°C

142

MARKING DIAGRAM

& PIN ASSIGNMENT

Power Dissipation

Steady

State

340

Pulsed Drain Current

t = 10 ms

3002

Drain

Operating Junction and Storage Temperature

Range

T , T

−55 to

°C

stg

+175

AYWWZZ

NTB

004N10G

Source Current (Body Diode)

283

520

Single Pulse Drain−to−Source Avalanche

Energy (V = 50 Vdc, V = 10 Vdc,

= 102 A, L = 0.1 mH, R = 25 W)

L(pk)

Gate

Drain

Lead Temperature for Soldering

Purposes, 1/8″ from Case for 10 Seconds

260

°C

Source

= Assembly Site Code

= Year Code

THERMAL RESISTANCE RATINGS

Parameter

WW = Week Code

ZZ = 2−digit Assembly Lot Code

NTB004N10G = Specific Device Code

Symbol

Max

0.44

62.5

Unit

Junction−to−Case (Drain) Steady State

Junction−to−Ambient (Note 1)

°C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Surface mounted on FR4 board using 1 sq in pad size,

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

(Cu Area 1.127 sq in [2 oz] including traces).

Publication Order Number:

January, 2022 − Rev. 4

NTB004N10G/D

12 3 4 5 6 7

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