Datasheet > NVF2955P

NVF2955P

更新时间： 2024-02-24 15:51:18

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	116K
描述
Power MOSFET â60 V, â2.6 A, Single PâChannel SOTâ223

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NVF2955P 数据手册

NTF2955, NVF2955,

NVF2955P

Power MOSFET

−60 V, −2.6 A, Single P−Channel SOT−223

Features

http://onsemi.com

• Design for low R

DS(on)

• Withstands High Energy in Avalanche and Commutation Modes

• AEC−Q101 Qualified − NVF2955, NVF2955P

TYP

I MAX

(BR)DSS

DS(on)

−60 V

−2.6 A

145 mW @ −10 V

• These Devices are Pb−Free and are RoHS Compliant

P−Channel

Applications

• Power Supplies

• PWM Motor Control

• Converters

• Power Management

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol Value

Unit

−60

MARKING DIAGRAMS AND

DSS

PIN ASSIGNMENT

Gate−to−Source Voltage

4 Drain

Continuous Drain

Current (Note 1)

Steady T = 25°C

State

−2.6

−2.0

2.3

T = 85°C

AYW

2955G

Power Dissipation

(Note 1)

Steady T = 25°C

State

Gate

Continuous Drain

Current (Note 2)

Steady T = 25°C

State

−1.7

−1.3

1.0

Source

Drain

T = 85°C

4 Drain

SOT−223

CASE 318E

STYLE 3

Power Dissipation

(Note 2)

T = 25°C

AYW

2955PG

Pulsed Drain Current

tp = 10 ms

−17

Operating Junction and Storage Temperature

T ,

−55 to

175

°C

Gate

STG

Source

Drain

Single Pulse Drain−to−Source Avalanche

EAS

225

260

= Assembly Location

= Year

= Work Week

Energy (V = 25 V, V = 10 V, I = 6.7 A,

L = 10 mH, R = 25 W)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 seconds)

°C

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL RESISTANCE RATINGS

ORDERING INFORMATION

Parameter

Symbol

Max

Unit

†

Device

Package

Shipping

Junction−to−Tab (Drain) − Steady State (Note 2)

NTF2955T1G

SOT−223

(Pb−Free)

1000 /Tape & Reel

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − Steady State (Note 2)

°C/W

150

NVF2955T1G

SOT−223

(Pb−Free)

1000/ Tape & Reel

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

NVF2955PT1G

SOT−223

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

1. When surface mounted to an FR4 board using 1 in. pad size (Cu. area = 1.127

in [1 oz] including traces)

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu. area = 0.341 in )

Publication Order Number:

May, 2013 − Rev. 6

NTF2955/D

12 3 4 5

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与NVF2955P相关器件

型号	品牌	获取价格	描述	数据表
NVF2955PT1G	ONSEMI	获取价格	Power MOSFET â60 V, â2.6 A, Single PâCh
NVF2955T1G	ONSEMI	获取价格	Power MOSFET â60 V, â2.6 A, Single PâCh
NVF3055-100T1G	ONSEMI	获取价格	Power MOSFET 3.0 Amps, 60 Volts
NVF3055L108	ONSEMI	获取价格	3.0 A, 60 V, Logic Level, N.Channel SOTâ223
NVF3055L108T1G	ONSEMI	获取价格	Power MOSFET 3.0 A, 60 V, Logic Level, NâCh
NVF3055L108T3G	ONSEMI	获取价格	3.0 A, 60 V, Logic Level, N.Channel SOTâ223
NVF4-1	DBLECTRO	获取价格	NHG RELAYS
NVF4-1A	HUAXINAN	获取价格	PC board mounting and direct insert mounting available
NVF4-1C	HUAXINAN	获取价格	Small size and light weight
NVF4-1U	HUAXINAN	获取价格	Small size and light weight

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