NVF3055-100T1G

更新时间： 2024-01-17 05:30:48

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	113K
描述
Power MOSFET 3.0 Amps, 60 Volts

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数据手册
替代型号

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NVF3055-100T1G 数据手册

NTF3055-100,

NVF3055-100

Power MOSFET

3.0 Amps, 60 Volts

N−Channel SOT−223

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

3.0 A, 60 V

R_DS(on)= 110 mW

Features

N−Channel

• AEC−Q101 Qualified and PPAP Capable − NVF3055−100

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MARKING

DIAGRAM

& PIN

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

ASSIGNMENT

Rating

Drain−to−Source Voltage

Symbol Value

Unit

Vdc

Drain

DSS

SOT−223

CASE 318E

STYLE 3

Drain−to−Gate Voltage (R = 10 MW)

DGR

AWW

Gate−to−Source Voltage

− Continuous

3055 G

Vdc

Vpk

− Non−repetitive (t ≤ 10 ms)

Drain Current

Gate Drain Source

− Continuous @ T = 25°C

3.0

1.4

9.0

Adc

Apk

− Continuous @ T = 100°C

− Single Pulse (t ≤ 10 ms)

= Assembly Location

= Work Week

= Specific Device Code

= Pb−Free Package

3055

Total Power Dissipation @ T = 25°C (Note 1)

2.1

1.3

Total Power Dissipation @ T = 25°C (Note 2)

0.014 W/°C

Derate above 25°C

(Note: Microdot may be in either location)

Operating and Storage Temperature Range

T , T

−55

to 175

°C

stg

ORDERING INFORMATION

†

Device

NTF3055−100T1G

Package

Shipping

Single Pulse Drain−to−Source Avalanche

Energy − Starting T = 25°C

1000 / Tape &

Reel

SOT−223

(Pb−Free)

(V = 25 Vdc, V = 10 Vdc,

I (pk) = 7.0 Apk, L = 3.0 mH, V = 60 Vdc)

Thermal Resistance

°C/W

°C

NTF3055−100T3G SOT−223

(Pb−Free)

4000 / Tape &

Reel

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

72.3

114

NVF3055−100T1G SOT−223

(Pb−Free)

1000 / Tape &

Reel

Maximum Lead Temperature for Soldering

260

Purposes, 1/8″ from case for 10 seconds

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.

(Cu. Area 1.127 sq in).

2. When surface mounted to an FR4 board using minimum recommended pad

size, 2−2.4 oz. (Cu. Area 0.272 sq in).

Publication Order Number:

October, 2011 − Rev. 4

NTF3055−100/D

12 3 4 5 6

中文翻译

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NVF3055-100T1G 替代型号

型号	品牌	替代类型	描述	数据表
FQT13N06LTF	ONSEMI	类似代替	功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，2.8 A，110 mΩ，S
NTF3055-100T1G	ONSEMI	类似代替	Power MOSFET 3.0 Amps, 60 Volts

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