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NVF2201NT1G PDF预览

NVF2201NT1G

更新时间: 2023-06-19 14:32:22
品牌 Logo 应用领域
安森美 - ONSEMI 小信号场效应晶体管
页数 文件大小 规格书
4页 57K
描述
Small Signal MOSFET 20V 300mA 1 Ohm Single N-Channel SC70

NVF2201NT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:,针数:3
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.73
配置:Single最大漏极电流 (Abs) (ID):0.3 A
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-609代码:e3
湿度敏感等级:1最高工作温度:150 °C
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.15 W子类别:FET General Purpose Powers
表面贴装:YES端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

NVF2201NT1G 数据手册

 浏览型号NVF2201NT1G的Datasheet PDF文件第2页浏览型号NVF2201NT1G的Datasheet PDF文件第3页浏览型号NVF2201NT1G的Datasheet PDF文件第4页 
MMBF2201NT1  
Preferred Device  
Power MOSFET  
300 mAmps, 20 Volts  
N−Channel SC−70/SOT−323  
These miniature surface mount MOSFETs low R  
assure  
DS(on)  
http://onsemi.com  
minimal power loss and conserve energy, making these devices ideal  
for use in small power management circuitry. Typical applications are  
dc−dc converters, power management in portable and  
battery−powered products such as computers, printers, PCMCIA  
cards, cellular and cordless telephones.  
300 mAMPS, 20 VOLTS  
RDS(on) = 1 W  
N−Channel  
Features  
3
Low R  
Provides Higher Efficiency and Extends Battery Life  
DS(on)  
Miniature SC−70/SOT−323 Surface Mount Package Saves  
Board Space  
Pb−Free Package is Available  
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
V
Value  
Unit  
2
Drain−to−Source Voltage  
20  
Vdc  
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage − Continuous  
V
20  
Vdc  
GS  
AND PIN ASSIGNMENT  
Drain Current  
mAdc  
3
− Continuous @ T = 25°C  
I
I
300  
240  
750  
A
A
D
D
3
− Continuous @ T = 70°C  
Drain  
− Pulsed Drain Current (t 10 ms)  
I
p
DM  
1
2
SC−70/SOT−323  
Total Power Dissipation @ T = 25°C  
(Note 1)  
P
D
A
N1 M G  
150  
1.2  
mW  
mW/°C  
CASE 419  
STYLE 8  
G
Derate above 25°C  
Operating and Storage Temperature Range T , T  
− 55 to 150  
833  
°C  
°C/W  
°C  
J
stg  
1
2
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Gate Source  
Maximum Lead Temperature for Soldering  
Purposes, for 10 seconds  
T
260  
L
N1 = Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
1. Mounted on G10/FR4 glass epoxy board using minimum recommended  
footprint.  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBF2201NT1  
SC−70/  
3000 Tape & Reel  
SOT−323  
MMBF2201NT1G  
SC−70/  
SOT−323  
(Pb−Free)  
3000 Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBF2201NT1/D  
 

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