FDY302NZ

更新时间： 2024-02-20 04:21:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	218K
描述
FDY302NZ Single N-Channel 2.5V Specified PowerTrenchÂ® MOSFET

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中文翻译

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数据手册
替代型号

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FDY302NZ 数据手册

Typical Characteristics

100

f = 1MHz

V_GS= 0 V

I_D= 600mA

C_iss

V_DS= 5V

10V

15V

C_oss

C_rss

0.2

0.4

0.6

0.8

Q_g, GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

SINGLE PULSE

R_θ_JA= 280°C/W

_A= 25°C

1ms

R_DS(ON)LIMIT

0.1

10ms

100ms

10s

V_GS= 4.5V

SINGLE PULSE

R_θ_JA= 280^oC/W

T_A= 25^oC

0.01

0.0001

0.001

0.01

0.1

100

1000

0.1

100

t₁, TIME (sec)

V_DS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θJA(t) = r(t) * R_θJA

R_θJA=280 °C/W

0.2

P(pk)

0.1

0.05

t₁

t₂

0.02

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.01

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

FDY302NZ Rev A

www.fairchildsemi.com

1 2 345 6

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FDY302NZ 替代型号

型号	品牌	替代类型	描述	数据表
NVE4153NT1G	ONSEMI	功能相似	Small Signal MOSFET
NTE4153NT1G	ONSEMI	功能相似	Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75

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