Datasheet > FDWS9509L-F085

FDWS9509L-F085

更新时间： 2024-11-20 11:13:55

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	361K
描述
P 沟道，逻辑电平，Power Trench® MOSFET，-40V，-65A，8mΩ

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中文翻译

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FDWS9509L-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel,

Logic Level, POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

−40 V

8.0 mW @ −10 V

−65 A

-40 V, -65 A, 8.0 mW

FDWS9509L-F085

Features

• Typ R

• Typ Q

= 6.3 mW at V = −10 V; I = −65 A

GS D

DS(on)

= 48 nC at V = −10 V; I = −65 A

g(tot)

• UIS Capability

P−Channel MOSFET

• Wettable Flanks for Automatic Optical Inspection (AOI)

• AEC−Q101 Qualified and PPAP Capable

Bottom

Top

• This Device is Pb−Free, Halogen Free/BFR Free and is RoHS

Compliant

Applications

Pin 1

• Automotive Engine Control

• PowerTrain Management

• Solenoid and Motor Drivers

• Electronic Steering

• Integrated Starter/Alternator

• Distributed Power Architectures and VRM

• Primary Switch for 12 V Systems

DFNW8

CASE 507AU

MARKING DIAGRAM

MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)

AYWWWL

FDWS

9509L

Parameter

Drain−to−Source Voltage

Symbol

Value

−40

Unit

DSS

Gate−to−Source Voltage

Continuous Drain Current

= 25°C

−65

(V = 10 V) (Note 1)

= Assembly Location

= Year

Pulsed Drain Current

See

Figure 4

= Work Week

= Assembly Lot

Single Pulse Avalanche Energy (Note 2)

Power Dissipation

FDWS9509L = Specific Device Code

107

0.71

Derate above 25°C

W/°C

°C

ORDERING INFORMATION

Operating and Storage Temperature

T , T

−55 to

+175

STG

†

Device

Package

Shipping

Thermal Resistance (Junction−to−Case)

1.4

°C/W

DFNW8

(Power 56)

(Pb−Free)

FDWS9509L−F085

3000 /

Tape & Reel

Maximum Thermal Resistance

(Junction−to−Ambient) (Note 3)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by wirebond configuration.

2. Starting Tj = 25°C, L = 50 mH, I = 56 A, V = −40 V during inductor charging

and V = 0 V during time in avalanche.

3. R

is the sum of the junction−to−case and case−to−ambient thermal

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design. The maximum rating presented

here is based on mounting on a 1 in pad of 2 oz copper.

Publication Order Number:

October, 2021 − Rev. 2

FDWS9509L−F085/D

12 3 4 5 6 7

中文翻译

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与FDWS9509L-F085相关器件

型号	品牌	获取价格	描述	数据表
FDWS9510L-F085	ONSEMI	获取价格	P 沟道逻辑电平 Power Trench® MOSFET-40V，-50A，13.5mΩ
FDWS9511L-F085	ONSEMI	获取价格	P 沟道，逻辑电平，Power Trench® MOSFET，-40V，-30A，20.5
FDWS9520L-F085	ONSEMI	获取价格	双 P 沟道，PowerTrench® MOSFET，-40 V，-20 A，12.5mΩ
FDX1125B	ETC	获取价格	FIBER OPTIC TRANSCEIVER
FDX1125D	ETC	获取价格	FIBER OPTIC TRANSCEIVER
FDY1002PZ	FAIRCHILD	获取价格	Dual P-Channel (?1.5 V) Specified PowerTrench?MOSFET
FDY1002PZ	ONSEMI	获取价格	双 P 沟道，(-1.5 V) 指定，PowerTrench? MOSFET，-20V，-
FDY100PZ	FAIRCHILD	获取价格	Single P-Channel (-2.5V) Specified PowerTrench MOSFET
FDY100PZ	ONSEMI	获取价格	P 沟道，(-2.5 V) 指定，PowerTrench® MOSFET，-20V，-0.
FDY101PZ	FAIRCHILD	获取价格	Single P-Channel (-2.5V) Specified PowerTrench MOSFET

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