Datasheet > FDWS9510L-F085

FDWS9510L-F085

更新时间： 2024-11-24 11:11:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	337K
描述
P 沟道逻辑电平 Power Trench® MOSFET-40V，-50A，13.5mΩ

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FDWS9510L-F085 数据手册

DATA SHEET

www.onsemi.com

MOSFET – P-Channel, Logic

Level, POWERTRENCH⁾

MAX

I MAX

DSS

DS(ON)

−40 V

13.5 mW @ −10 V

−50 A

-40 V, -50 A, 13.5 mW

D (5,6,7,8)

FDWS9510L-F085

Features

• Typ R

• Typ Q

= 11 mW at V = −10 V; I = −50 A

GS D

DS(on)

G (4)

= 28 nC at V = −10 V; I = −50 A

g(tot)

• UIS Capability

S (1,2,3)

P−Channel MOSFET

• Wettable Flanks for Automatic Optical Inspection (AOI)

• AEC−Q101 Qualified

• These Devices are Pb−Free and are RoHS Compliant

Top

Bottom

Applications

• Automotive Engine Control

• Powertrain Management

• Solenoid and Motor Drivers

• Electronic Steering

• Integrated Starter/Alternator

• Distributed Power Architectures and VRM

• Primary Switch for 12 V Systems

Pin 1

DFNW8

CASE 507AU

MARKING DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

−40

Unit

DSS

AYWWWL

Gate−to−Source Voltage

FDWS

9510L

Continuous Drain Current

= 25°C

−50

(V = 10 V) (Note 1)

Pulsed Drain Current

See

Figure 4

= Assembly Location

= Year

= Work Week

= Assembly Lot

= Device Code

Single Pulse Avalanche Energy (Note 2)

Power Dissipation

FDWS

9510L

Derate above 25°C

0.5

W/°C

°C

Operating and Storage Temperature

T , T

−55 to

+175

STG

(Note: Microdot may be in either location)

Thermal Resistance (Junction−to−Case)

°C/W

Maximum Thermal Resistance

(Junction−to−Ambient) (Note 3)

ORDERING INFORMATION

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Current is limited by wirebond configuration

†

Device

Package

Shipping

FDWS9510L−F085

DFNW8

(Power56)

(Pb−Free)

3000 /

Tape & Reel

2. Starting Tj = 25°C, L = 40 mH, I = −40 A, V

= −40 V during inductor

charging and V = 0 V during time in avalanche

3. R

is the sum of the junction−to−case and case−to−ambient thermal

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

resistance where the case thermal reference is defined as the solder

mounting surface of the drain pins. R

is guaranteed by design while R

is determined by the user’s board design. The maximum rating presented

here is based on mounting on a 1 in pad of 2 oz copper.

Publication Order Number:

October, 2021 − Rev. 2

FDWS9510L−F085/D

12 3 4 5 6 7

中文翻译

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与FDWS9510L-F085相关器件

型号	品牌	获取价格	描述	数据表
FDWS9511L-F085	ONSEMI	获取价格	P 沟道，逻辑电平，Power Trench® MOSFET，-40V，-30A，20.5
FDWS9520L-F085	ONSEMI	获取价格	双 P 沟道，PowerTrench® MOSFET，-40 V，-20 A，12.5mΩ
FDX1125B	ETC	获取价格	FIBER OPTIC TRANSCEIVER
FDX1125D	ETC	获取价格	FIBER OPTIC TRANSCEIVER
FDY1002PZ	FAIRCHILD	获取价格	Dual P-Channel (?1.5 V) Specified PowerTrench?MOSFET
FDY1002PZ	ONSEMI	获取价格	双 P 沟道，(-1.5 V) 指定，PowerTrench? MOSFET，-20V，-
FDY100PZ	FAIRCHILD	获取价格	Single P-Channel (-2.5V) Specified PowerTrench MOSFET
FDY100PZ	ONSEMI	获取价格	P 沟道，(-2.5 V) 指定，PowerTrench® MOSFET，-20V，-0.
FDY101PZ	FAIRCHILD	获取价格	Single P-Channel (-2.5V) Specified PowerTrench MOSFET
FDY101PZ	ONSEMI	获取价格	P 沟道，-2.5V 指定，PowerTrench™ MOSFET，-20V，-0.15A

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