Datasheet > FDY1002PZ

FDY1002PZ

更新时间： 2024-11-19 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	260K
描述
Dual P-Channel (?1.5 V) Specified PowerTrench?MOSFET

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FDY1002PZ 数据手册

September 2008

FDY1002PZ

Dual P-Channel (–1.5 V) Specified PowerTrench^®MOSFET

–20 V, –0.83 A, 0.5 Ω

Features

General Description

Max r_DS(on)= 0.5 Ω at V_GS= –4.5 V, I_D= –0.83 A

Max r_DS(on)= 0.7 Ω at V_GS= –2.5 V, I_D= –0.70 A

Max r_DS(on)= 1.2 Ω at V_GS= –1.8 V, I_D= –0.43 A

Max r_DS(on)= 1.8 Ω at V_GS= –1.5 V, I_D= –0.36 A

HBM ESD protection level = 1400 V (Note 3)

RoHS Compliant

This Dual P-Channel MOSFET has been designed using

Fairchild Semiconductor’s advanced Power Trench process to

optimize the r_DS(on)@V_GS= –1.5 V.

Application

Li-Ion Battery Pack

SC89-6

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

–20

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±8

(Note 1a)

–0.83

I_D

–1.0

Power Dissipation

(Note 1a)

(Note 1b)

0.625

P_D

0.446

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJA

Thermal Resistance, Junction to Ambient

(Note 1a)

(Note 1b)

200

280

°C/W

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape Width

8 mm

Quantity

FDY1002PZ

SC89-6

7 ”

3000 units

FDY1002PZ Rev.B

www.fairchildsemi.com

12 3 4 5 6 7

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