Datasheet > FDW6923_08

FDW6923_08

更新时间： 2024-11-23 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		肖特基二极管
页数	文件大小	规格书
5页	226K
描述
P-Channel 2.5V Specified PowerTrench剖 MOSFET with Schottky Diode

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数据手册

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FDW6923_08 数据手册

July 2008

FDW6923

P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It is combined with a low

forward drop Schottky diode which is isolated from the

MOSFET, providing a compact power solution for

asynchronous DC/DC converter applications.

• –3.5 A, –20 V. R_DS(ON)= 0.045 Ω @ V_GS= –4.5 V

R_DS(ON)= 0.075 Ω @ V_GS= –2.5 V

• V < 0.55 V @ 1 A

• High performance trench technology for extremely

Applications

low R_DS(ON)

• DC/DC conversion

• Low profile TSSOP-8 package

TSSOP-8

Pin 1

MOSFET Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–20

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

± 12

I_D

(Note 1)

–3.5

–30

MOSFET Power Dissipation (minimum pad)

Schottky Power Dissipation (minimum pad)

(Note 1)

1.2

1.0

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Schottky Maximum Ratings

V_RRM

Repetitive Peak Reverse Voltage

Average Forward Current

Peak Forward Current

1.5

I_F

I_FM

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(minimum pad)

MOSFET: 115

Schottky: 130

R_θJA

°C/W

(Note 1)

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

6923

FDW6923

13’’

16mm

2500 units

FDW6923 Rev. D1(W)

2008 Fairchild Semiconductor International

12 3 4 5

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