Datasheet > FDP032N08_12

FDP032N08_12

更新时间： 2024-02-28 08:33:18

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	283K
描述
N-Channel PowerTrenchÂ® MOSFET 75V, 235A, 3.2mÎ©

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FDP032N08_12 数据手册

September 2012

FDP032N08

N-Channel PowerTrench MOSFET

75V, 235A, 3.2mΩ

Features

Description

•

R_DS(on)= 2.5mΩ ( Typ.)@ V_GS= 10V, I_D= 75A

This N-Channel MOSFET is produced using Fairchild Semicon-

ductor’s adcanced PowerTrench^®process that has been espe-

cially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Fast switching speed

Low gate charge

High performance trench technology for extremely low R_DS(on)

High power and current handling capability

RoHS compliant

Application

•

DC to DC convertors / Synchronous Rectification

TO-220

D S

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FDP032N08

Units

Drain to Source Voltage

Gate to Source Voltage

±20

235*

Drain Current

Continuous (T_C=

25^oC, Silicon Limited)

I_D

Continuous (T_C= 100^oC, Silicon Limited)

165*

Continuous (T_C

25^oC, Package Limited)

120

I_DM

D rai n Cur rent

- P uls ed

(Note 1)

940

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 3)

1995

6.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

375

P_D

Power Dissipation

2.5

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.

Thermal Characteristics

Symbol

R_θJC

Parameter

Thermal Resistance, Junction to Case

Units

FDP032N08

0.4

0.5

R_θCS

R_θJA

Thermal Resistance, Case to Sink Typ.

Thermal Resistance, Junction to Ambient

^oC/W

62.5

FDP032N08 Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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