Datasheet > FDP039N08B

FDP039N08B

更新时间： 2024-10-02 12:23:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	1646K
描述
N-Channel PowerTrench MOSFET 80V, 171A, 3.9mW

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FDP039N08B 数据手册

June 2012

FDP039N08B_F102

N-Channel PowerTrench^®MOSFET

80V, 171A, 3.9mW

Features

Description

•

R_DS(on)= 3.16mW ( Typ.) @ V_GS= 10V, I_D= 100A

This N-Channel MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench process that has been

especially tailored to minimize the on-state resistance and yet

maintain superior switching performance.

Low FOM R_DS(on)*Q_G

Low reverse recovery charge, Q_rr

Soft reverse recovery body diode

Enables highly efficiency in synchronous rectification

Fast Switching Speed

Application

•

Synchronous Rectification for Server / Telecom PSU

Battery Charger and Battery Protection Circuit

DC motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

•

100% UIL Tested

RoHS Compliant

TO-220

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

- Continuous (T_C= 25^oC, Silicon Limited)

- Continuous (T_C= 25^oC, Package Limited)

- Continuous (T_C= 100^oC, Silicon Limited)

171*

120

I_D

Drain Current

121

I_DM

Drain Current

- Pulsed

(Note 1)

(Note 2)

(Note 3)

684

E_AS

dv/dt

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

547

6.0

V/ns

W/^oC

^oC

(T_C= 25^oC)

- Derate above 25^oC

214

P_D

Power Dissipation

1.43

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +175

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

* Package limitation current is 120A.

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Units

Ratings

0.7

R_qJC

R_qJA

^oC/W

62.5

FDP039N08B_F102 Rev.C0

www.fairchildsemi.com

12 3 4 5 6 7...9

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