Datasheet > FDP038AN06A0_05

FDP038AN06A0_05

更新时间： 2024-02-26 03:58:33

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	259K
描述
N-Channel PowerTrench㈢ MOSFET 60V, 80A, 3.8mз

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FDP038AN06A0_05 数据手册

February 2005

FDP038AN06A0 / FDI038AN06A0

N-Channel PowerTrench MOSFET

60V, 80A, 3.8mΩ

Features

Applications

•

= 3.5mΩ (Typ.), V = 10V, I = 80A

•

Motor / Body Load Control

ABS Systems

DS(ON)

Q (tot) = 95nC (Typ.), V = 10V

Low Miller Charge

Powertrain Management

Injection Systems

Low Q Body Diode

UIS Capability (Single Pulse and Repetitive Pulse)

Qualified to AEC Q101

DC-DC converters and Off-line UPS

Distributed Power Architectures and VRMs

Primary Switch for 12V and 24V systems

Formerly developmental type 82584

SOURCE

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

TO-220AB

FDP SERIES

TO-262AB

FDI SERIES

MOSFET Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

DSS

±20

Drain Current

Continuous (T < 151 C, V = 10V)

Continuous (T

= 25 C, V = 10V, with R

= 62 C/W)

θJA

amb

Pulsed

Figure 4

625

Single Pulse Avalanche Energy (Note 1)

Power dissipation

310

Derate above 25 C

2.07

W/ C

T , T

Operating and Storage Temperature

-55 to 175

STG

Thermal Characteristics

Thermal Resistance Junction to Case TO-220, TO-262

0.48

C/W

θJC

θJA

Thermal Resistance Junction to Ambient TO-220, TO-262 (Note 2)

C/W

This product has been designed to meet the extreme test conditions and environment demanded by the automotive

industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality

systems certification.

FDP038AN06A0 / FDI038AN06A0 Rev. B

12 3 4 5 6 7...10

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