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FDP038AN06A0 PDF预览

FDP038AN06A0

更新时间: 2023-09-03 20:28:24
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管
页数 文件大小 规格书
13页 655K
描述
N 沟道,Power Trench® MOSFET,60V,80A,3.8mΩ

FDP038AN06A0 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.83
雪崩能效等级(Eas):625 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):17 A最大漏极电流 (ID):17 A
最大漏源导通电阻:0.0038 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):310 W认证状态:Not Qualified
子类别:FET General Purpose Powers表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDP038AN06A0 数据手册

 浏览型号FDP038AN06A0的Datasheet PDF文件第2页浏览型号FDP038AN06A0的Datasheet PDF文件第3页浏览型号FDP038AN06A0的Datasheet PDF文件第4页浏览型号FDP038AN06A0的Datasheet PDF文件第5页浏览型号FDP038AN06A0的Datasheet PDF文件第6页浏览型号FDP038AN06A0的Datasheet PDF文件第7页 
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