Datasheet > FDMS8670S

FDMS8670S

更新时间： 2024-11-14 11:15:51

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
9页	395K
描述
N 沟道，PowerTrench® SyncFET™ MOSFET，30V，42A，3.5mΩ

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技术参数
数据手册
替代型号

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FDMS8670S 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-F5	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	0.97
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (Abs) (ID)：	42 A
最大漏极电流 (ID)：	20 A	最大漏源导通电阻：	0.0035 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-F5
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	78 W
最大脉冲漏极电流 (IDM)：	200 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	FLAT
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FDMS8670S 数据手册

Is Now Part of

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FDMS8670S 替代型号

型号	品牌	替代类型	描述	数据表
FDMS7692A	ONSEMI	类似代替	30V N沟道PowerTrench® MOSFET
BSC882N03MSG	INFINEON	功能相似	Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me

与FDMS8670S相关器件

型号	品牌	获取价格	描述	数据表
FDMS8670S_07	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ SyncFET TM 30V, 42A, 3
FDMS8670S_08	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ SyncFET TM
FDMS8672AS	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ SyncFET 30V, 28A, 5.0m
FDMS8672S	FAIRCHILD	获取价格	N-Channel PowerTrench SyncFET 30V, 35A, 5mohm
FDMS8674	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET
FDMS8674_08	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET 30V, 21A, 5.0mヘ
FDMS8680	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET 30V, 35A, 7.0mヘ
FDMS8680	TI	获取价格	Complete DDR2, DDR3 and DDR3L Memory Power Solution Synchronous Buck
FDMS8680	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，35A，7.0mΩ
FDMS8680-F121	FAIRCHILD	获取价格	Transistor

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