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FDMS8674 PDF预览

FDMS8674

更新时间: 2024-09-25 03:36:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 223K
描述
N-Channel PowerTrench㈢ MOSFET

FDMS8674 数据手册

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November 2007  
FDMS8674  
tm  
N-Channel PowerTrench® MOSFET  
30V, 21A, 5.0mΩ  
Features  
General Description  
„ Max rDS(on) = 5.0mat VGS = 10V, ID = 17A  
„ Max rDS(on) = 8.0mat VGS = 4.5V, ID = 14A  
The FDMS8674 has been designed to minimize losses in power  
conversion application. Advancements in both silicon and  
package technologies have been combined to offer the lowest  
rDS(on) while maintaining excellent switching performance.  
„ Advanced Package and Silicon combination  
for low rDS(on) and high efficiency  
Applications  
„ MSL1 robust package design  
„ RoHS Compliant  
„ Computing VR & IMVP Vcore  
„ Secondary Side Synchronous Buck  
„ POL DC-DC Converter  
„ Oring FET / Load Switch  
Pin 1  
S
S
S
G
G
S
S
S
4
3
2
1
5
6
7
8
D
D
D
D
D
D
D
D
Power 56 (Bottom View)  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
30  
±20  
V
V
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25°C  
TC = 25°C  
TA = 25°C  
21  
94  
ID  
A
(Note 1a)  
(Note 3)  
17  
-Pulsed  
150  
EAS  
Single Pulse Avalanche Energy  
Power Dissipation  
181  
mJ  
W
TC = 25°C  
TA = 25°C  
78  
PD  
Power Dissipation  
(Note 1a)  
2.5  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJA  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
1.6  
50  
°C/W  
(Note 1a)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
Tape Width  
12mm  
Quantity  
FDMS8674  
FDMS8674  
Power 56  
13’’  
3000units  
1
©2007 Fairchild Semiconductor Corporation  
FDMS8674 Rev.B  
www.fairchildsemi.com  

FDMS8674 替代型号

型号 品牌 替代类型 描述 数据表
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