Datasheet > FDMC8321L

FDMC8321L

更新时间： 2024-02-03 22:07:42

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	366K
描述
N 沟道 Power Trench® MOSFET 40V，49A，2.5mΩ

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数据手册

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FDMC8321L 数据手册

Typical Characteristics T_J= 25 °C unless otherwise noted

10000

1000

100

I_D= 22 A

C_iss

V_DD= 24 V

V_DD= 16 V

C_oss

V_DD= 20 V

f = 1 MHz

= 0 V

C_rss

0.1

Q , GATE CHARGE (nC)

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

100

V_GS= 10 V

V_GS= 4.5 V

T_J= 25 ^oC

T_J= 100 ^oC

Limited by package

R_θJC= 3.1 ^oC/W

T_J= 125 ^o

0.01

0.1

100

125

150

T_C, CASE TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Case Temperature

1000

200

100

SINGLE PULSE

_θJA= 125 ^oC/W

_A= 25 ^oC

1 ms

100

10 ms

THIS AREA IS

LIMITED BY r

DS(on)

100 ms

1 s

SINGLE PULSE

T_J= MAX RATED

0.1

0.01

_θJA= 125 ^oC/W

T_A= 25 ^oC

10 s

0.5

10^-3

10^-2

10^-1

100

1000

0.01

0.1

100200

t, PULSE WIDTH (sec)

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure12. Single Pulse Maximum

Power Dissipation

FDMC8321L Rev.C2

www.fairchildsemi.com

1 2 3 456 7 8 9

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