Datasheet > FDD5810_07

FDD5810_07

更新时间： 2024-11-20 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	375K
描述
N-Channel Logic Level Trench㈢ MOSFET

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FDD5810_07 数据手册

October 2007

FDD5810

N-Channel Logic Level Trench^®MOSFET

60V, 36A, 27mΩ

Applications

Motor / Body Load Control

Features

R_DS(ON)= 22mΩ (Typ.), V_GS= 5V, I_D= 29A

Q_g(5)= 13nC (Typ.), V_GS= 5V

Low Miller Charge

ABS Systems

Powertrain Management

Injection System

Low Q_rrBody Diode

DC-DC converters and Off-line UPS

UIS Capability (Single Pulse / Repetitive Pulse)

Qualified to AEC Q101

Distributed Power Architecture and VRMs

Primary Switch for 12V and 24V systems

RoHS Compliant

D-PAK

TO-252

(TO-252)

www.fairchildsemi.com

FDD5810 Rev. A (W)

12 3 4 5 6 7

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型号	品牌	获取价格	描述	数据表
FDD5810_10	FAIRCHILD	获取价格	N-Channel Logic Level TrenchÂ® MOSFET 60V, 36
FDD5810_F085	FAIRCHILD	获取价格	Power Field-Effect Transistor, 7.4A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Me
FDD5810-F085	FAIRCHILD	获取价格	N-Channel Logic Level Trench MOSFET 60V, 36A, 27mOhm
FDD5810-F085	ONSEMI	获取价格	60 V、37 A、18 mΩ、DPAK、逻辑电平N 沟道 PowerTrench®
FDD5N50	FAIRCHILD	获取价格	N-Channel MOSFET 500V, 4A, 1.4ヘ
FDD5N50F	FAIRCHILD	获取价格	N-Channel MOSFET, FRFET 500V, 3.5A, 1.55ヘ
FDD5N50FTM	ROCHESTER	获取价格	3.5A, 500V, 1.55ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, ROHS COMPLIANT, DPAK-3
FDD5N50FTM_WS	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDD5N50FTM-WS	ONSEMI	获取价格	N 沟道 UniFETTM FRFET® MOSFET
FDD5N50NZ	ONSEMI	获取价格	Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal