FDD5690_NL

更新时间： 2024-11-18 13:02:31

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飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲
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数据手册

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FDD5690_NL 数据手册

June 1999

PRELIMINARY

FDD5690

60V N-Channel PowerTrench^TMMOSFET

General Description

Features

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers.

30 A, 60 V. R_DS(ON)= 0.027Ω @ V_GS= 10 V

R_DS(ON)= 0.032 Ω @ V_GS= 6 V.

Low gate charge (23nC typical).

Fast switching speed.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R_DS(ON)

specifications.

High performance trench technology for extremely

low R_DS(ON)

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency.

TO-252

T_C=25^oC unless otherwise noted

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±20

Maximum Drain Current -Continuous

(Note 1)

(Note 1a)

100

Maximum Drain Current -Pulsed

Maximum Power Dissipation @ T_C= 25^oC

T_A= 25^oC

P_D

(Note 1)

(Note 1a)

(Note 1b)

3.2

T_A= 25^oC

1.3

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to- Case

(Note 1)

2.5

R_θ_JC

°C/W

Thermal Resistance, Junction-to- Ambient

(Note 1a)

(Note 1b)

R_θ_JA

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

16mm

Quantity

FDD5690

13’’

2500

1999 Fairchild Semiconductor Corporation

FDD5690, Rev. B

12 3 4 5 6 7

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