Datasheet > FDD5810

FDD5810

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	784K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:37A;Vgs(th)(V):±20;漏源导通电阻:22mΩ@10V

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FDD5810 数据手册

FDD5810

UMW

60V N-Channel MOSFET

Features

_DS(V) = 60V

●

I =36A (V_GS= 10V)

R_DS(ON)<22mΩ (V _GS= 10V)

R_DS(ON)<27mΩ (V _GS= 5V)

Low Miller Charge

●

Low Q Body Diode

Applications

Motor / Body Load Control

●

ABS Systems

●

Powertrain Management

Injection System

●

DC-DC converters and Off-line UPS

Distributed Power Architecture and VRMs

Primary Switch for 12V and 24V systems

Absolute Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current Continuous (V_GS= 10V)

Drain Current Continuous (V_GS= 5V)

Continuous (T_A= 25^oC, V_GS= 10V, with R_θJA= 52^oC/W)

Pulsed

I_D

7.4

Figure 4

E_AS

Single Pulse Avalanche Energy (Note 1)

Power Dissipation

Derate above 25^oC

P_D

0.48

-55 to 175

W/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

Thermal Characteristics

R_θJC

R_θJA

Maximum Thermal resistance Junction to Case TO-252

Thermal Resistance Junction to Ambient TO-252, 1in²copper pad area

2.1

^oC/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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