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FDB024N06 PDF预览

FDB024N06

更新时间: 2024-11-14 03:36:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 615K
描述
N-Channel PowerTrench㈢ MOSFET 60V, 265A, 2.4mヘ

FDB024N06 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, D2PAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:8.5
雪崩能效等级(Eas):2531 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):265 A最大漏极电流 (ID):120 A
最大漏源导通电阻:0.0024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):395 W
最大脉冲漏极电流 (IDM):1060 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDB024N06 数据手册

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July 2008  
FDB024N06  
N-Channel PowerTrench MOSFET  
60V, 265A, 2.4mΩ  
tm  
®
Features  
General Description  
RDS(on) = 1.8m( Typ.) @ VGS = 10V, ID = 75A  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced PowerTrench process that has been  
especially tailored to minimize the on-state resistance and yet  
maintain superior switching performance.  
Fast switching speed  
Low gate charge  
High performance trench technology for extremely low RDS(on)  
High power and current handling capability  
RoHS compliant  
Application  
DC to DC convertors / Synchronous Rectification  
D
D
G
D2-PAK  
FDB Series  
G
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted  
Symbol  
VDSS  
VGSS  
Parameter  
Ratings  
60  
Units  
V
Drain to Source Voltage  
Gate to Source Voltage  
±20  
V
265*  
190*  
120  
A
Drain Current  
-
-
-
Continuous (TC =  
25oC, Silicon Limited)  
ID  
Continuous (TC = 100oC, Silicon Limited)  
A
Continuous (TC  
=
25oC, Package Limited)  
A
IDM  
Drain Current  
- Pulsed  
(Note 1)  
1060  
2531  
3.5  
A
EAS  
dv/dt  
Single Pulsed Avalanche Energy  
Peak Diode Recovery dv/dt  
(Note 2)  
(Note 3)  
mJ  
V/ns  
W
W/oC  
oC  
(TC = 25oC)  
- Derate above 25oC  
395  
PD  
Power Dissipation  
2.6  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +175  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A.  
Thermal Characteristics  
Symbol  
RθJC  
RθJA  
Parameter  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Ratings  
0.38  
Units  
oC/W  
62.5  
©2008 Fairchild Semiconductor Corporation  
FDB024N06 Rev. A3  
1
www.fairchildsemi.com  

FDB024N06 替代型号

型号 品牌 替代类型 描述 数据表
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