EIC1415-12
14.40-15.40GHz 12-Watt Internally Matched Power FET
FEATURES
•
14.40– 15.40GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
Excelics
EIC1415-12
.024
.421
•
•
•
•
•
•
•
.827±.010 .669
+41 dBm Output Power at 1dB Compression
5 dB Power Gain at 1dB Compression
23% Power Added Efficiency
.120 MIN
.120 MIN
YYWW
SN
.004
.063
.125
-44 dBc IM3 at Po = 30 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.508±.008
.442
.004
.105±.008
.168±.010
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
Gain at 1dB Compression
DS = 10 V, IDSQ ≈ 3200mA
f = 14.40-15.40GHz
f = 14.40-15.40GHz
f = 14.40-15.40GHz
40
41
dBm
4
5
dB
dB
G1dB
V
Gain Flatness
±0.7
∆G
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
23
%
PAE
Id1dB
VDS = 10 V, IDSQ ≈ 3200mA
f = 14.40-15.40GHz
Drain Current at 1dB Compression
f = 14.40-15.40GHz
3700
4200
mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 30 dBm S.C.L2
-41
-44
dBc
IM3
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 15.40GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
9000
-2.5
1.8
13000
-4.0
mA
V
oC/W
IDSS
VP
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, IDS = 84 mA
2.1
RTH
Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING
ABSOLUTE1
15V
OPERATING2
SYMBOLS
PARAMETERS
10V
-4V
Vds
Vgs
Drain-Source Voltage
Gate-Source Voltage
Input Power
-5V
Output power reach 3dB
Gain Compression point
Output power reach 3dB
Gain Compression point
Pin
175°C
-65°C to +175°C
71W
175°C
-65°C to +175°C
71W
Tch
Tstg
Pt
Channel Temperature
Storage Temperature
Total Power Dissipation (Tc=25°)
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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