Datasheet > EIC4450-15

EIC4450-15

更新时间： 2024-01-16 17:59:17

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
3页	136K
描述
4.40-5.00GHz 15-Watt Internally Matched Power FET

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EIC4450-15 数据手册

EIC4450-15

ISSUED: 03/30/2009

4.40-5.00GHz 15-Watt Internally Matched Power FET

2X 0.079 MIN

4X 0.102

Excelics

EIC4450-15

FEATURES

0.024

•

4.40– 5.00GHz Bandwidth

0.945 0.803

0.580

Input/Output Impedance Matched to 50 Ohms

+42 dBm Output Power at 1dB Compression

10.5 dB Power Gain at 1dB Compression

31% Power Added Efficiency

-46 dBc IM3 at Po = 31 dBm SCL

Hermetic Metal Flange Package

YYWW

0.315

0.685

0.055

0.168

0.617

0.010

0.004

0.095

0.158

0.055

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 4500mA

f = 4.40-5.00GHz

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 4500mA

Gain Flatness

f = 4.40-5.00GHz

9.5

10.5

G_1dB

±0.7

∆G

V_DS= 10 V, I_DSQ≈ 4500mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 4500mA

f = 4.40-5.00GHz

Drain Current at 1dB Compression

4500

5100

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 31 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 5.00GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

9000

-2.5

1.8

13000

-4.0

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 84 mA

2.1

R_TH

Note: 1. Tested with 30 Ohm gate resistor, forward and reverse gate current should nopt exceed 35mA and -5.1mA respectively.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING

ABSOLUTE¹

15V

OPERATING²

SYMBOLS

PARAMETERS

10V

-4V

Vds

Vgs

Drain-Source Voltage

Gate-Source Voltage

Input Power

-5V

Output power reach 3dB

Gain Compression point

Output power reach 3dB

Gain Compression point

175°C

-65°C to +175°C

71W

175°C

-65°C to +175°C

71W

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation (Tc=25°)

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

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