Datasheet > EIC5964-8

EIC5964-8

更新时间： 2024-02-20 22:49:16

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	165K
描述
5.90-6.40GHz 8-Watt Internally Matched Power FET

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技术参数
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EIC5964-8 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EIC5964-8 数据手册

EIC5964-8

UPDATED 08/21/2007

5.90-6.40GHz 8-Watt Internally Matched Power FET

FEATURES

•

5.90–6.40GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+39.5 dBm Output Power at 1dB Compression

10.0 dB Power Gain at 1dB Compression

37% Power Added Efficiency

-46 dBc IM3 at PO = 28.5 dBm SCL

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

Output Power at 1dB Compression f = 5.9-6.4GHz

MIN

TYP

MAX

UNITS

38.5

39.5

dBm

V_DS= 10 V, I_DSQ≈ 2200mA

Gain at 1dB Compression

_DS= 10 V, I_DSQ≈ 2200mA

Gain Flatness

_DS= 10 V, I_DSQ≈ 2200mA

Power Added Efficiency at 1dB Compression

f = 5.9-6.4GHz

G_1dB

9.0

10.0

f = 5.9-6.4GHz

±0.6

∆G

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 2200mA

f = 5.9-6.4GHz

Drain Current at 1dB Compression f = 5.9-6.4GHz

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L²

2200

2600

IM3

-43

-46

dBc

V_DS= 10 V, I_DSQ≈ 65% IDSS

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance³

f =6.4GHz

V_DS= 3 V, V_GS= 0 V

I_DSS

V_P

R_TH

4000

-2.5

3.5

4500

-4.0

4.0

^oC/W

_DS= 3 V, I_DS= 40 mA

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

Vds

Vgs

Igf

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

10V

15V

-5V

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

-4V

96mA

28.8mA

-19.2mA

39dBm

175C

-4.8mA

Igr

@ 3dB Compression

175C

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65C to +175C

37.5W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised October 2007

12 3 4

中文翻译

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与EIC5964-8相关器件

型号	品牌	获取价格	描述	数据表
EIC5964-8NH	EXCELICS	获取价格	5.90-6.40GHz 8-Watt Internally Matched Power FET
EIC5972-12	EXCELICS	获取价格	5.90-7.20 GHz 12-Watt Internally Matched Power FET
EIC5972-4	EXCELICS	获取价格	5.90-7.20 GHz 4-Watt Internally Matched Power FET
EIC6472-4	EXCELICS	获取价格	6.40-7.20GHz 4-Watt Internally-Matched Power FET
EIC6472-4NH	EXCELICS	获取价格	6.40-7.20GHz 4-Watt Internally-Matched Power FET
EIC6472-5	EXCELICS	获取价格	6.40-7.20GHz 5-Watt Internally-Matched Power FET
EIC6472-5NH	EXCELICS	获取价格	6.40-7.20GHz 5-Watt Internally-Matched Power FET
EIC6472-8	EXCELICS	获取价格	6.40-7.20GHz 8-Watt Internally-Matched Power FET
EIC6472-8NH	EXCELICS	获取价格	6.40-7.20GHz 8-Watt Internally-Matched Power FET
EIC6775-15	EXCELICS	获取价格	6.70-7.50 GHz 15-Watt Internally Matched Power FET

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