Datasheet > EIC5972-12

EIC5972-12

更新时间： 2024-02-23 05:44:43

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	87K
描述
5.90-7.20 GHz 12-Watt Internally Matched Power FET

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EIC5972-12 数据手册

EIC5972-12

UPDATED 11/10/2006

5.90-7.20 GHz 12-Watt Internally Matched Power FET

Excelics

EIC5972-12

FEATURES

.024

•

5.90– 7.20GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+41.5 dBm Output Power at 1dB Compression

9.0 dB Power Gain at 1dB Compression

36% Power Added Efficiency

-46 dBc IM3 at P_out= 30.5 dBm SCL

Hermetic Metal Flange Package

100% Tested for DC, RF, and R_TH

945 .803

.079 MIN

YYWW

.315

.685

.617

.004

.168

.095

.055

ALL DIMENSIONS IN INCHES

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

Caution! ESD sensitive device.

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 3200mA

f = 5.90-7.20GHz

40.5

41.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 3200mA

Gain Flatness

f = 5.90-7.20GHz

8.0

9.0

G_1dB

±0.8

∆G

V_DS= 10 V, I_DSQ≈ 3200mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 3200mA

f = 5.90-7.20GHz

Drain Current at 1dB Compression

3400

3800

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 30.5 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 7.20GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

6000

-2.5

2.5

7500

-4.0

3.0

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 60 mA

R_TH

Note: 1) Tested with 50 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

MAXIMUM RATING AT 25 ^oC ^1,2

SYMBOLS

PARAMETERS

ABSOLUTE

CONTINUOUS

10V

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

-5

Vds

-4V

Vgs

129.6mA

-21.6mA

40.5dBm

175 ^oC

43.2mA

Igsf

-7.2mA

Igsr

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

50W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised November 2006

中文翻译

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与EIC5972-12相关器件

型号	品牌	获取价格	描述	数据表
EIC5972-4	EXCELICS	获取价格	5.90-7.20 GHz 4-Watt Internally Matched Power FET
EIC6472-4	EXCELICS	获取价格	6.40-7.20GHz 4-Watt Internally-Matched Power FET
EIC6472-4NH	EXCELICS	获取价格	6.40-7.20GHz 4-Watt Internally-Matched Power FET
EIC6472-5	EXCELICS	获取价格	6.40-7.20GHz 5-Watt Internally-Matched Power FET
EIC6472-5NH	EXCELICS	获取价格	6.40-7.20GHz 5-Watt Internally-Matched Power FET
EIC6472-8	EXCELICS	获取价格	6.40-7.20GHz 8-Watt Internally-Matched Power FET
EIC6472-8NH	EXCELICS	获取价格	6.40-7.20GHz 8-Watt Internally-Matched Power FET
EIC6775-15	EXCELICS	获取价格	6.70-7.50 GHz 15-Watt Internally Matched Power FET
EIC7177-10	EXCELICS	获取价格	7.10-7.70 GHz 10-Watt Internally-Matched Power FET
EIC7179-10	EXCELICS	获取价格	7.10-7.90 GHz 10-Watt Internally Matched Power FET

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