Datasheet > EIC8596-15

EIC8596-15

更新时间： 2024-02-29 18:50:51

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	97K
描述
8.50-9.60 GHz 15-Watt Internally Matched Power FET

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EIC8596-15 数据手册

EIC8596-15

UPDATED 07/25/2007

8.50-9.60 GHz 15-Watt Internally Matched Power FET

FEATURES

•

8.50– 9.60GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+42.5 dBm Output Power at 1dB Compression

7.0 dB Power Gain at 1dB Compression

31% Power Added Efficiency

-46 dBc IM3 at PO = 31.5 dBm SCL

100% Tested for DC, RF, and R_TH

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

V_DS= 10 V, I_DSQ≈ 4500mA

Gain at 1dB Compression

_DS= 10 V, I_DSQ≈ 4500mA

f = 8.50-9.60GHz

41.0

42.0

dBm

6.0

7.0

G_1dB

Gain Flatness

±0.6

∆G

V_DS= 10 V, I_DSQ≈ 4500mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 4500mA

f = 8.50-9.60GHz

Drain Current at 1dB Compression

f = 8.50-9.60GHz

4600

5200

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 31.5 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 9.60GHz

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

8500

-2.5

2.0

11000

-4.0

^oC/W

I_DSS

V_P

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 85 mA

2.5

R_TH

Note: 1. Tested with 50 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING^1,2

SYMBOLS

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

10V

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reserve Gate Current

Input Power

Vds

-5

-3V

Vgs

189.9mA

-10.6mA

41.5dBm

175 ^oC

63.3mA

Igsf

-31.7mA

Igsr

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

60W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised July 2007

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