EID1415A1-8
UPDATED 11/12/2007
14.40-15.35GHz 8-Watt Internally-Matched Power FET
FEATURES
•
•
•
•
•
•
14.40-15.35GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+39.5 dBm Output Power at 1dB Compression
6.5 dB Power Gain at 1dB Compression
27% Power Added Efficiency
100% Tested for DC, RF, and RTH
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression f =14.40-15.35GHz
VDS = 10 V, IDSQ ≈ 2200mA
38.5
39.5
dBm
Gain at 1dB Compression
DS = 10 V, IDSQ ≈ 2200mA
Gain Flatness
DS = 10 V, IDSQ ≈ 2200mA
Power Added Efficiency at 1dB Compression
f =14.40-15.35GHz
G1dB
∆G
5.5
6.5
dB
dB
%
V
f =14.40-15.35GHz
±0.6
V
PAE
27
VDS = 10 V, IDSQ ≈ 2200mA
f =14.40-15.35GHz
Id1dB
IDSS
VP
Drain Current at 1dB Compression f =14.40-15.35GHz
2800
4200
-1.2
3.5
3600
5760
-2.5
4.0
mA
mA
V
Saturated Drain Current
Pinch-off Voltage
VDS = 3 V, VGS = 0 V
DS = 3 V, IDS = 40 mA
V
RTH
Thermal Resistance3
oC/W
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFE
SYMBOLS
Vds
Vgs
Igf
PARAMETERS
ABSOLUTE1
CONTINUOUS2
10V
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
15V
-5V
-4V
96.0mA
-19.2mA
38.5dBm
175C
28.8mA
-4.8mA
Igr
@ 3dB Compression
175C
Pin
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
Tstg
Pt
-65C to +175C
-65C to +175C
37.5W
37.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised November 2007