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EID1415A1-8NH PDF预览

EID1415A1-8NH

更新时间: 2022-12-18 00:31:48
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
4页 176K
描述
14.40-15.35GHz 8-Watt Internally-Matched Power FET

EID1415A1-8NH 数据手册

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EID1415A1-8  
UPDATED 11/12/2007  
14.40-15.35GHz 8-Watt Internally-Matched Power FET  
FEATURES  
14.40-15.35GHz Bandwidth  
Input/Output Impedance Matched to 50 Ohms  
+39.5 dBm Output Power at 1dB Compression  
6.5 dB Power Gain at 1dB Compression  
27% Power Added Efficiency  
100% Tested for DC, RF, and RTH  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
P1dB  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression f =14.40-15.35GHz  
VDS = 10 V, IDSQ 2200mA  
38.5  
39.5  
dBm  
Gain at 1dB Compression  
DS = 10 V, IDSQ 2200mA  
Gain Flatness  
DS = 10 V, IDSQ 2200mA  
Power Added Efficiency at 1dB Compression  
f =14.40-15.35GHz  
G1dB  
G  
5.5  
6.5  
dB  
dB  
%
V
f =14.40-15.35GHz  
±0.6  
V
PAE  
27  
VDS = 10 V, IDSQ 2200mA  
f =14.40-15.35GHz  
Id1dB  
IDSS  
VP  
Drain Current at 1dB Compression f =14.40-15.35GHz  
2800  
4200  
-1.2  
3.5  
3600  
5760  
-2.5  
4.0  
mA  
mA  
V
Saturated Drain Current  
Pinch-off Voltage  
VDS = 3 V, VGS = 0 V  
DS = 3 V, IDS = 40 mA  
V
RTH  
Thermal Resistance3  
oC/W  
Note: 1. Tested with 100 Ohm gate resistor.  
2. S.C.L. = Single Carrier Level.  
3. Overall Rth depends on case mounting.  
ABSOLUTE MAXIMUM RATING FOR EFE  
SYMBOLS  
Vds  
Vgs  
Igf  
PARAMETERS  
ABSOLUTE1  
CONTINUOUS2  
10V  
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
Reverse Gate Current  
Input Power  
15V  
-5V  
-4V  
96.0mA  
-19.2mA  
38.5dBm  
175C  
28.8mA  
-4.8mA  
Igr  
@ 3dB Compression  
175C  
Pin  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
Tstg  
Pt  
-65C to +175C  
-65C to +175C  
37.5W  
37.5W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 4  
Revised November 2007  

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