EID1416-12
UPDATED 12/06/2006
14.0-16.0 GHz 12-Watt Internally Matched Power FET
Excelics
.024
EID1416-12
.827±.010 .669
.120 MIN
.421
FEATURES
.120 MIN
•
•
•
•
•
•
14.0– 16.0GHz Bandwidth
YYWW
Input/Output Impedance Matched to 50 Ohms
+41.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
22% Power Added Efficiency
SN
.004
.125
.063
.508±.008
.442
.004
.105±.008
Hermetic Metal Flange Package
.168±.010
ALL DIMENSIONS IN INCHES
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
DS = 10 V, IDSQ ≈ 3200mA
f = 14.0-16.0GHz
40.0
41.0
dBm
V
Gain at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
Gain Flatness
f = 14.0-16.0GHz
f = 14.0-16.0GHz
4.0
5.0
dB
dB
%
G1dB
∆G
±1.0
VDS = 10 V, IDSQ ≈ 3200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 3200mA
22
PAE
f = 14.0-16.0GHz
f = 14.0-16.0GHz
Drain Current at 1dB Compression
4000
6000
-1.0
2.5
5000
7500
-2.5
3.0
mA
mA
V
Id1dB
IDSS
VP
Saturated Drain Current
Pinch-off Voltage
Thermal Resistance2
VDS = 3 V, VGS = 0 V
VDS = 3 V, IDS = 60 mA
oC/W
RTH
Note:
1. Tested with 50 Ohm gate resistor.
2. Overall Rth depends on case mounting.
MAXIMUM RATING1,2 (Ta = 25°C)
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
ABSOLUTE1
CONTINUOUS2
10V
-3V
15V
-5V
VDS
VGS
135mA
-21mA
45mA
Igsf
-7mA
Igsr
Pin
40.0dBm
175 oC
-65 to +175 oC
@ 3dB Compression
175 oC
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
-65 to +175 oC
Tstg
50W
50W
Pt
Note:
1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised December 2006