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EID1416-12

更新时间: 2022-12-18 00:31:48
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EXCELICS /
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描述
14.0-16.0 GHz 12-Watt Internally Matched Power FET

EID1416-12 数据手册

  
EID1416-12  
UPDATED 12/06/2006  
14.0-16.0 GHz 12-Watt Internally Matched Power FET  
Excelics  
.024  
EID1416-12  
.827±.010 .669  
.120 MIN  
.421  
FEATURES  
.120 MIN  
14.0– 16.0GHz Bandwidth  
YYWW  
Input/Output Impedance Matched to 50 Ohms  
+41.0 dBm Output Power at 1dB Compression  
5.0 dB Power Gain at 1dB Compression  
22% Power Added Efficiency  
SN  
.004  
.125  
.063  
.508±.008  
.442  
.004  
.105±.008  
Hermetic Metal Flange Package  
.168±.010  
ALL DIMENSIONS IN INCHES  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
P1dB  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
DS = 10 V, IDSQ 3200mA  
f = 14.0-16.0GHz  
40.0  
41.0  
dBm  
V
Gain at 1dB Compression  
VDS = 10 V, IDSQ 3200mA  
Gain Flatness  
f = 14.0-16.0GHz  
f = 14.0-16.0GHz  
4.0  
5.0  
dB  
dB  
%
G1dB  
G  
±1.0  
VDS = 10 V, IDSQ 3200mA  
Power Added Efficiency at 1dB Compression  
VDS = 10 V, IDSQ 3200mA  
22  
PAE  
f = 14.0-16.0GHz  
f = 14.0-16.0GHz  
Drain Current at 1dB Compression  
4000  
6000  
-1.0  
2.5  
5000  
7500  
-2.5  
3.0  
mA  
mA  
V
Id1dB  
IDSS  
VP  
Saturated Drain Current  
Pinch-off Voltage  
Thermal Resistance2  
VDS = 3 V, VGS = 0 V  
VDS = 3 V, IDS = 60 mA  
oC/W  
RTH  
Note:  
1. Tested with 50 Ohm gate resistor.  
2. Overall Rth depends on case mounting.  
MAXIMUM RATING1,2 (Ta = 25°C)  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
Reverse Gate Current  
Input Power  
ABSOLUTE1  
CONTINUOUS2  
10V  
-3V  
15V  
-5V  
VDS  
VGS  
135mA  
-21mA  
45mA  
Igsf  
-7mA  
Igsr  
Pin  
40.0dBm  
175 oC  
-65 to +175 oC  
@ 3dB Compression  
175 oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
-65 to +175 oC  
Tstg  
50W  
50W  
Pt  
Note:  
1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 1  
Revised December 2006  

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