Datasheet > EID1414A1-5

EID1414A1-5

更新时间： 2024-11-02 06:56:19

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	118K
描述
14.00-14.50 GHz 5-Watt Internally-Matched Power FET

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EID1414A1-5 数据手册

EID1414A1-5

UPDATED 07/12/2007

14.00-14.50 GHz 5-Watt Internally-Matched Power FET

FEATURES

•

14.00-14.50 GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+37.5 dBm Output Power at 1dB Compression

7.5 dB Power Gain at 1dB Compression

35% Power Added Efficiency

Hermetic Metal Flange Package

100% Tested for DC, RF, and R_TH

DESCRIPTION

The EID1414A1-5 is a high power, highly linear,

single stage MFET amplifier in a flange mount

package. This amplifier features Excelics’ unique

PHEMT transistor technology.

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression f = 14.00-14.50GHz

V_DS= 10 V, I_DSQ= 1200mA

P_1dB

37.0

37.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ= 1200mA

Gain Flatness

f = 14.00-14.50GHz

G_1dB

6.5

7.5

f = 14.00-14.50GHz

±0.6

∆G

PAE

Id_1dB

I_DSS

V_P

_DS= 10 V, I_DSQ= 1200mA

Power Added Efficiency at 1dB Compression

_DS= 10 V, I_DSQ= 1200mA f = 14.00-14.50GHz

Drain Current at 1dB Compression f = 14.00-14.50GHz

1400

2080

-2.5

5.5

1800

2880

-4.0

6.0

Saturated Drain Current

Pinch-off Voltage

V_DS= 3 V, V_GS= 0 V

_DS= 3 V, I_DS= 20 mA

R_TH

Thermal Resistance²

^oC/W

Notes:

1. Tested with 100 Ohm gate resistor.

2. Overall Rth depends on case mounting.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised July 2007

12 3 4

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