Datasheet > EID1415A1-12

EID1415A1-12

更新时间： 2024-02-25 19:24:27

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	165K
描述
14.40-15.35 GHz 12-Watt Internally-Matched Power FET

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EID1415A1-12 数据手册

EID1415A1-12

UPDATED 07/12/2007

14.40-15.35 GHz 12-Watt Internally-Matched Power FET

FEATURES

•

14.40-15.35 GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+41.0 dBm Output Power at 1dB Compression

6.0 dB Power Gain at 1dB Compression

25% Power Added Efficiency

Hermetic Metal Flange Package

100% Tested for DC, RF, and R_TH

DESCRIPTION

The EID1415A1-12 is a high power, highly linear,

single stage MFET amplifier in a flange mount

package. This amplifier features Excelics’ unique

PHEMT transistor technology.

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

PARAMETERS/TEST CONDITIONS¹

SYMBOL

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

V_DS= 10 V, I_DSQ≈ 3200mA

Gain at 1dB Compression

f = 14.40-15.35GHz

40.0

41.0

dBm

P_1dB

G_1dB

∆G

f = 14.40-15.35GHz

5.0

6.0

V_DS= 10 V, I_DSQ≈ 3200mA

Gain Flatness

V_DS= 10 V, I_DSQ≈ 3200mA

±0.6

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

I_DSS

V_P

V_DS= 10 V, I_DSQ≈ 3200mA

f = 14.40-15.35GHz

Drain Current at 1dB Compression

f = 14.40-15.35GHz

3800

6000

-1.2

2.2

4800

8000

-2.5

2.5

Saturated Drain Current

Pinch-off Voltage

V_DS= 3 V, V_GS= 0 V

V_DS= 3 V, I_DS= 60 mA

^oC/W

R_TH

Thermal Resistance²

Notes:

Tested with 50 Ohm gate resistor.

Overall Rth depends on case mounting.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised July 2007

12 3 4

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