EIC8596-2
UPDATED 07/25/2007
8.50-9.60 GHz 2-Watt Internally-Matched Power FET
FEATURES
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8.50-9.60GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+33.5 dBm Output Power at 1dB Compression
8.0 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-46 dBc IM3 at PO = 22.5 dBm SCL
100% Tested for DC, RF, and RTH
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression
DS = 10 V, IDSQ ≈ 550mA
f = 8.50-9.60GHz
32.5
33.5
dBm
V
Gain at 1dB Compression
VDS = 10 V, IDSQ ≈ 550mA
Gain Flatness
f = 8.50-9.60GHz
f = 8.50-9.60GHz
7.0
8.0
dB
dB
G1dB
±0.6
+ 0.8
700
∆G
VDS = 10 V, IDSQ ≈ 550mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ ≈ 550mA
30
%
PAE
Id1dB
f = 8.50-9.60GHz
f = 8.50-9.60GHz
Drain Current at 1dB Compression
600
mA
Output 3rd Order Intermodulation Distortion
∆f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2
-43
-46
dBc
IM3
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 9.60GHz
Saturated Drain Current
VDS = 3 V, VGS = 0 V
1000
-2.5
11
1250
-4.0
12
mA
V
oC/W
IDSS
VP
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, IDS = 10 mA
RTH
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MAXIMUM RATING AT 25 °C1,2
SYMBOLS
PARAMETERS
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
ABSOLUTE1
15
CONTINUOUS2
10V
Vds
-5
-4V
Vgs
Igsf
Igsr
Pin
21.6mA
-3.6mA
32.5dBm
175 oC
7.2mA
-1.2mA
@ 3dB Compression
175 oC
Channel Temperature
Storage Temperature
Total Power Dissipation
Tch
Tstg
Pt
-65 to +175 oC
-65 to +175 oC
12.5W
12.5W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised July 2007