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EIC8596-2 PDF预览

EIC8596-2

更新时间: 2022-06-13 14:02:09
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
2页 101K
描述
8.50-9.60 GHz 2-Watt Internally-Matched Power FET

EIC8596-2 数据手册

 浏览型号EIC8596-2的Datasheet PDF文件第2页 
EIC8596-2  
UPDATED 07/25/2007  
8.50-9.60 GHz 2-Watt Internally-Matched Power FET  
FEATURES  
8.50-9.60GHz Bandwidth  
Input/Output Impedance Matched to 50 Ohms  
+33.5 dBm Output Power at 1dB Compression  
8.0 dB Power Gain at 1dB Compression  
30% Power Added Efficiency  
-46 dBc IM3 at PO = 22.5 dBm SCL  
100% Tested for DC, RF, and RTH  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
P1dB  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
DS = 10 V, IDSQ 550mA  
f = 8.50-9.60GHz  
32.5  
33.5  
dBm  
V
Gain at 1dB Compression  
VDS = 10 V, IDSQ 550mA  
Gain Flatness  
f = 8.50-9.60GHz  
f = 8.50-9.60GHz  
7.0  
8.0  
dB  
dB  
G1dB  
±0.6  
+ 0.8  
700  
G  
VDS = 10 V, IDSQ 550mA  
Power Added Efficiency at 1dB Compression  
VDS = 10 V, IDSQ 550mA  
30  
%
PAE  
Id1dB  
f = 8.50-9.60GHz  
f = 8.50-9.60GHz  
Drain Current at 1dB Compression  
600  
mA  
Output 3rd Order Intermodulation Distortion  
f = 10 MHz 2-Tone Test; Pout = 22.5 dBm S.C.L2  
-43  
-46  
dBc  
IM3  
VDS = 10 V, IDSQ 65% IDSS  
f = 9.60GHz  
Saturated Drain Current  
VDS = 3 V, VGS = 0 V  
1000  
-2.5  
11  
1250  
-4.0  
12  
mA  
V
oC/W  
IDSS  
VP  
Pinch-off Voltage  
Thermal Resistance3  
VDS = 3 V, IDS = 10 mA  
RTH  
Notes:  
1. Tested with 100 Ohm gate resistor.  
2. S.C.L. = Single Carrier Level.  
3. Overall Rth depends on case mounting.  
MAXIMUM RATING AT 25 °C1,2  
SYMBOLS  
PARAMETERS  
Drain-Source Voltage  
Gate-Source Voltage  
Forward Gate Current  
Reverse Gate Current  
Input Power  
ABSOLUTE1  
15  
CONTINUOUS2  
10V  
Vds  
-5  
-4V  
Vgs  
Igsf  
Igsr  
Pin  
21.6mA  
-3.6mA  
32.5dBm  
175 oC  
7.2mA  
-1.2mA  
@ 3dB Compression  
175 oC  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
Tstg  
Pt  
-65 to +175 oC  
-65 to +175 oC  
12.5W  
12.5W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 2  
Revised July 2007  

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