Datasheet > EIC8596-4NH

EIC8596-4NH

更新时间： 2024-11-02 06:56:19

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	180K
描述
8.50-9.60GHz 4-Watt Internally-Matched Power FET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EIC8596-4NH 数据手册

EIC8596-4

UPDATED 08/21/2007

8.50-9.60GHz 4-Watt Internally-Matched Power FET

FEATURES

•

8.50 –9.60GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+36.5 dBm Output Power at 1dB Compression

7.5 dB Power Gain at 1dB Compression

30% Power Added Efficiency

-43 dBc IM3 at Po = 25.5 dBm SCL

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression f = 8.50-9.60GHz

_DS= 10 V, I_DSQ≈ 1100mA

35.5

36.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 1100mA

Gain Flatness

f = 8.50-9.60GHz

G_1dB

6.5

7.5

±0.6

∆G

V_DS= 10 V, I_DSQ≈ 1100mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 1100mA

f = 8.50-9.60GHz

Drain Current at 1dB Compression f = 8.50-9.60GHz

1100

1300

Output 3rd Order Intermodulation Distortion

IM3

∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L²

-40

-43

dBc

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 9.60GHz

I_DSS

V_P

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

1800

-2.5

5.0

2200

-4.0

6.0

^oC/W

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 20 mA

R_TH

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

Vds

Vgs

Igf

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

10V

15V

-5V

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

-4V

48mA

14.4mA

-9.6mA

36.0dBm

175C

-2.4mA

Igr

@ 3dB Compression

175C

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65C to +175C

25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised October 2007

12 3 4

中文翻译

下载PDF

与EIC8596-4NH相关器件

型号	品牌	获取价格	描述	数据表
EIC8596-8	EXCELICS	获取价格	8.50-9.60GHz 8-Watt Internally-Matched Power FET
EIC8596-8NH	EXCELICS	获取价格	8.50-9.60GHz 8-Watt Internally-Matched Power FET
EID0910A1-12	EXCELICS	获取价格	9.50-10.50 GHz 12-Watt Internally Matched Power FET
EID1112A1-5	EXCELICS	获取价格	11.70-12.70 GHz 5-Watt Internally Matched Power FET
EID1112A1-8	EXCELICS	获取价格	11.70-12.70 GHz 8-Watt Internally Matched Power FET
EID1314A1-12	EXCELICS	获取价格	13.75-14.50 GHz 12-Watt Internally Matched Power FET
EID1314A1-5	EXCELICS	获取价格	13.75-14.50 GHz 5-Watt Internally-Matched Power FET
EID1314A1-8	EXCELICS	获取价格	13.75-14.50 GHz 8-Watt Internally-Matched Power FET
EID1414A1-12	EXCELICS	获取价格	14.00-14.50 GHz 12-Watt Internally Matched Power FET
EID1414A1-5	EXCELICS	获取价格	14.00-14.50 GHz 5-Watt Internally-Matched Power FET