Datasheet > EID1112A1-8

EID1112A1-8

更新时间： 2024-01-30 17:40:45

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	87K
描述
11.70-12.70 GHz 8-Watt Internally Matched Power FET

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EID1112A1-8 数据手册

EID1112A1-8

UPDATED 07/12/2007

11.70-12.70 GHz 8-Watt Internally Matched Power FET

FEATURES

Excelics

.024

EID1112A1-8

•

11.70-12.70 GHz Bandwidth

.827±.010 .669

.120 MIN

.421

Input/Output Impedance Matched to 50 Ohms

+39.5 dBm Output Power at 1dB Compression

8.0 dB Power Gain at 1dB Compression

35% Power Added Efficiency

Hermetic Metal Flange Package

100% Tested for DC, RF, and R_TH

.120 MIN

YYWW

.004

.125

.063

.508±.008

.442

.004

.105±.008

.168±.010

ALL DIMENSIONS IN INCHES

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

Caution! ESD sensitive device.

PARAMETERS/TEST CONDITIONS¹

Output Power at 1dB Compression f = 11.70-12.70GHz

_DS= 10 V, I_DSQ≈ 2200mA

SYMBOL

MIN

TYP

MAX

UNITS

38.5

39.5

dBm

P_1dB

G_1dB

∆G

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 2200mA

Gain Flatness

f = 11.70-12.70GHz

7.0

8.0

f = 11.70-12.70GHz

±0.6

V_DS= 10 V, I_DSQ≈ 2200mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

I_DSS

V_P

V_DS= 10 V, I_DSQ≈ 2200mA

f = 11.70-12.70GHz

Drain Current at 1dB Compression

2800

4400

-1.2

3.5

3200

5200

-2.5

4.0

Saturated Drain Current

Pinch-off Voltage

V_DS= 3 V, V_GS= 0 V

V_DS= 3 V, I_DS= 40 mA

Thermal Resistance³

^oC/W

R_TH

Notes: 1. Tested with 100 Ohm gate resistor.

2. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2

SYMBOL

CHARACTERISTIC

VALUE

V_DS

V_GS

I_DS

Drain to Source Voltage

Gate to Source Voltage

Drain Current

10 V

-3.0 V

IDSS

I_GSF

P_IN

Forward Gate Current

Input Power

80 mA

@ 3dB compression

32 W

P_T

Total Power Dissipation

Channel Temperature

Storage Temperature

T_CH

150°C

T_STG

-65/+150°C

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised July 2007

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