Datasheet > EIC5964-5

EIC5964-5

更新时间： 2024-01-28 08:50:35

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
4页	161K
描述
5.90-6.40 GHz 5-Watt Internally Matched Power FET

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EIC5964-5 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

EIC5964-5 数据手册

EIC5964-5

UPDATED 08/21/2007

5.90-6.40 GHz 5-Watt Internally Matched Power FET

FEATURES

•

5.90–6.40GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+37.5 dBm Output Power at 1dB Compression

10.0 dB Power Gain at 1dB Compression

37% Power Added Efficiency

-46 dBc IM3 at PO = 26.5 dBm SCL

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive

device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

Output Power at 1dB Compression f = 5.90-6.40GHz

MIN

TYP

MAX

UNITS

36.5

37.5

dBm

_DS= 10 V, I_DSQ≈ 1600mA

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 1600mA

Gain Flatness

f = 5.90-6.40GHz

G_1dB

9.0

10.0

±0.6

∆G

V_DS= 10 V, I_DSQ≈ 1600mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 1600mA

f = 5.90-6.40GHz

Drain Current at 1dB Compression f = 5.90-6.40GHz

1600

1900

Output 3rd Order Intermodulation Distortion

IM3

∆f = 10 MHz 2-Tone Test; Pout = 26.5 dBm S.C.L²

-43

-46

dBc

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 6.40GHz

I_DSS

V_P

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

2900

-2.5

5.0

3500

-4.0

5.5

^oC/W

Pinch-off Voltage

Thermal Resistance³

V_DS= 3 V, I_DS= 30 mA

R_TH

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

Vds

Vgs

Igf

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

ABSOLUTE¹

CONTINUOUS²

10V

15V

-5V

-4V

68mA

20.4mA

Igr

-13.6mA

37dBm

175C

-3.4mA

@ 3dB Compression

175C

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65C to +175C

27W

-65C to +175C

27W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised October 2007

12 3 4

中文翻译

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