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EIC4853-25 PDF预览

EIC4853-25

更新时间: 2024-02-20 00:51:37
品牌 Logo 应用领域
EXCELICS /
页数 文件大小 规格书
2页 88K
描述
4.8-5.30 GHz 25-Watt Internally Matched Power FET

EIC4853-25 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Base Number Matches:1

EIC4853-25 数据手册

 浏览型号EIC4853-25的Datasheet PDF文件第2页 
EIC4853-25  
4.8-5.30 GHz 25-Watt Internally Matched Power FET  
2X 0.079 MIN  
4X 0.102  
FEATURES  
4.80 – 5.30GHz Bandwidth  
Excelics  
EIC4853-25  
0.024  
Input/Output Impedance Matched to 50 Ohms  
+44.5 dBm Output Power at 1dB Compression  
9.5 dB Power Gain at 1dB Compression  
36% Power Added Efficiency  
Hermetic Metal Flange Package  
100% Tested for DC, RF, and RTH  
0.945 0.803  
0.580  
YYWW  
SN  
0.315  
0.685  
0.055  
0.168  
0.617  
0.010  
0.004  
0.095  
0.158  
0.055  
Caution! ESD sensitive device.  
ELECTRICAL CHARACTERISTICS (Tb = 25°C)  
SYMBOL  
P1dB  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
f = 4.80-5.30 GHz  
43.5  
44.5  
dBm  
VDS = 10 V, IDSQ 6500mA  
Gain at 1dB Compression  
f = 4.80-5.30 GHz  
f = 4.80-5.30 GHz  
9
10  
dB  
dB  
%
G1dB  
G  
VDS = 10 V, IDSQ 6500mA  
Gain Flatness  
VDS = 10 V, IDSQ 6500mA  
Power Added Efficiency at 1dB Compression  
±0.6  
36  
PAE  
VDS = 10 V, IDSQ 6500mA  
f = 4.80-5.30 GHz  
Drain Current at 1dB Compression  
f = 4.80-5.30 GHz  
7050  
11  
8300  
16  
mA  
A
Id1dB  
IDSS  
VP  
Saturated Drain Current  
Pinch-off Voltage  
VDS = 3 V, VGS = 0 V  
VDS = 3 V, IDS = 130 mA  
-2.5  
1.4  
-4.0  
1.8  
V
oC/W  
Thermal Resistance2  
RTH  
1.  
Tested with 15 Ohm gate resistor, forward and reverse gate current should not exceed 130mA and -10.5mA respectively  
2. Overall Rth depends on case mounting.  
MAXIMUM RATING AT Tb = 25°C1,2  
SYMBOLS  
PARAMETERS  
ABSOLUTE1  
15  
OPERATING2  
Drain-Source Voltage  
Gate-Source Voltage  
Input Power  
10V  
-4V  
Vds  
-5  
Vgs  
38 dBm  
175 oC  
-65 to +175 oC  
@ 3dB Compression  
175 oC  
Pin  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
-65 to +175 oC  
Tstg  
83W  
83W  
Pt  
Note: 1. Operating the device beyond the absolute maximum rating may cause permanent damage.  
2. Operating beyond the absolute maximum ratings may reduce MTTF of the device.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
Page 1 of 2  
Revision. 01  

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