Datasheet > EIC4450-8NH

EIC4450-8NH

更新时间： 2024-02-08 10:17:30

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EXCELICS		/
页数	文件大小	规格书
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描述
4.40-5.00GHz 8-Watt Internally Matched Power FET

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EIC4450-8NH 数据手册

EIC4450-8

UPDATED 08/21/2007

4.40-5.00GHz 8-Watt Internally Matched Power FET

FEATURES

•

4.40–5.00GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+39.5 dBm Output Power at 1dB Compression

10.5 dB Power Gain at 1dB Compression

35% Power Added Efficiency

-46 dBc IM3 at PO = 28.5 dBm SCL

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

Output Power at 1dB Compression f = 4.4-5.0GHz

MIN

TYP

MAX

UNITS

38.5

39.5

dBm

V_DS= 10 V, I_DSQ≈ 2200mA

Gain at 1dB Compression

_DS= 10 V, I_DSQ≈ 2200mA

Gain Flatness

_DS= 10 V, I_DSQ≈ 2200mA

Power Added Efficiency at 1dB Compression

f = 4.4-5.0GHz

G_1dB

9.5

10.5

f = 4.4-5.0GHz

±0.6

∆G

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 2200mA

f = 4.4-5.0GHz

Drain Current at 1dB Compression f = 4.4-5.0GHz

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L²

2300

2600

IM3

-43

-46

dBc

V_DS= 10 V, I_DSQ≈ 65% IDSS

Saturated Drain Current

Pinch-off Voltage

Thermal Resistance³

f =5.0GHz

V_DS= 3 V, V_GS= 0 V

I_DSS

V_P

R_TH

4000

-2.5

3.5

5000

-4.0

4.0

^oC/W

_DS= 3 V, I_DS= 40 mA

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

Vds

Vgs

Igf

PARAMETERS

ABSOLUTE¹

CONTINUOUS²

10V

15V

-5V

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

-4V

96mA

28.8mA

-19.2mA

39dBm

175C

-4.8mA

Igr

@ 3dB Compression

175C

Tch

Tstg

Channel Temperature

Storage Temperature

Total Power Dissipation

-65C to +175C

37.5W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 4

Revised October 2007

12 3 4

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