EIC1415-4
UPDATED 11/01/2007
14.40-15.40GHz 4-Watt Internally-Matched Power FET
FEATURES
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14.40 –15.40GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.0 dBm Output Power at 1dB Compression
5.0 dB Power Gain at 1dB Compression
25% Power Added Efficiency
-43 dBc IM3 at Po = 25.0 dBm SCL
100% Tested for DC, RF, and RTH
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
P1dB
PARAMETERS/TEST CONDITIONS1
MIN
TYP
MAX
UNITS
Output Power at 1dB Compression f = 14.40-15.40GHz
DS = 10 V, IDSQ ≈ 1100mA
35.5
36.0
dBm
V
Gain at 1dB Compression
VDS = 10 V, IDSQ ≈ 1100mA
Gain Flatness
f = 14.40-15.40GHz
f = 14.40-15.40GHz
G1dB
4.5
5.0
dB
dB
±0.6
∆G
VDS = 10 V, IDSQ ≈ 1100mA
Power Added Efficiency at 1dB Compression
PAE
Id1dB
25
%
VDS = 10 V, IDSQ ≈ 11000mA
f = 14.40-15.40GHz
Drain Current at 1dB Compression f = 14.40-15.40GHz
1100
1400
mA
Output 3rd Order Intermodulation Distortion
IM3
∆f = 10 MHz 2-Tone Test; Pout = 25.0 dBm S.C.L2
-40
-43
dBc
VDS = 10 V, IDSQ ≈ 65% IDSS
f = 15.40GHz
IDSS
VP
Saturated Drain Current
VDS = 3 V, VGS = 0 V
2080
-2.5
5.5
2880
-4.0
6.0
mA
V
oC/W
Pinch-off Voltage
Thermal Resistance3
VDS = 3 V, IDS = 20 mA
RTH
Note: 1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
ABSOLUTE MAXIMUM RATING FOR EFD
SYMBOLS
Vds
Vgs
Igf
PARAMETERS
ABSOLUTE1
CONTINUOUS2
10V
15V
-5V
Drain-Source Voltage
Gate-Source Voltage
Forward Gate Current
Reverse Gate Current
Input Power
-4V
48mA
14.4mA
-2.4mA
-9.6mA
35.5dBm
175C
Igr
@ 3dB Compression
175C
Pin
Tch
Tstg
Pt
Channel Temperature
Storage Temperature
Total Power Dissipation
-65C to +175C
-65C to +175C
25W
25W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
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Revised November 2007