Datasheet > EIC3439-4

EIC3439-4

更新时间： 2024-02-09 08:57:37

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
2页	120K
描述
3.40-3.90GHz 4-Watt Internally Matched Power FET

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EIC3439-4 数据手册

EIC3439-4

ISSUED DATED: 11/12/2007

3.40-3.90GHz 4-Watt Internally Matched Power FET

FEATURES

•

3.40–3.90GHz Bandwidth

Input/Output Impedance Matched to 50 Ohms

+36.5 dBm Output Power at 1dB Compression

12.0 dB Power Gain at 1dB Compression

35% Power Added Efficiency

-46 dBc IM3 at PO = 25.5 dBm SCL

100% Tested for DC, RF, and R_TH

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

_DS= 10 V, I_DSQ≈ 1100mA

f = 3.40-3.90GHz

35.5

36.5

dBm

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 1100mA

Gain Flatness

f = 3.40-3.90GHz

11.0

12.0

G_1dB

±0.6

∆G

V_DS= 10 V, I_DSQ≈ 1100mA

Power Added Efficiency at 1dB Compression

PAE

Id_1dB

V_DS= 10 V, I_DSQ≈ 1100mA

f = 3.40-3.90GHz

Drain Current at 1dB Compression

1200

1500

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L²

-43

-46

dBc

IM3

V_DS= 10 V, I_DSQ≈ 65% IDSS

Saturated Drain Current

Pinch-off Voltage

f = 3.90GHz

V_DS= 3 V, V_GS= 0 V

2000

-2.5

5.5

2500

-4.0

6.0

^oC/W

I_DSS

V_P

R_TH

V_DS= 3 V, I_DS= 20 mA

Thermal Resistance³

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

PARAMETERS

Drain-Source Voltage

Gate-Source Voltage

Forward Gate Current

Reverse Gate Current

Input Power

ABSOLUTE¹

CONTINUOUS²

10V

15V

-5V

V_DS

-4V

V_GS

48.0 mA

-9.6 mA

35.5dBm

175 ^oC

14.4 mA

Igsf

-2.4 mA

Igsr

@ 3dB Compression

175 ^oC

Channel Temperature

Storage Temperature

Total Power Dissipation

Tch

-65 to +175 ^oC

Tstg

25W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 2

Revised November 2007

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