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EIC4450-10NH PDF预览

EIC4450-10NH

更新时间: 2024-01-09 15:13:14
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EXCELICS /
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2页 93K
描述
4.40-5.00 GHz 10-Watt Internally Matched Power FET

EIC4450-10NH 数据手册

 浏览型号EIC4450-10NH的Datasheet PDF文件第2页 
EIC4450-10  
UPDATED 07/25/2007  
4.40-5.00 GHz 10-Watt Internally Matched Power FET  
FEATURES  
4.40–5.00GHz Bandwidth  
Input/Output Impedance Matched to 50 Ohms  
+40.5 dBm Output Power at 1dB Compression  
10.0 dB Power Gain at 1dB Compression  
35% Power Added Efficiency  
-46 dBc IM3 at PO = 29.5 dBm SCL  
100% Tested for DC, RF, and RTH  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
SYMBOL  
P1dB  
PARAMETERS/TEST CONDITIONS1  
MIN  
TYP  
MAX  
UNITS  
Output Power at 1dB Compression  
VDS = 10 V, IDSQ 3200mA  
Gain at 1dB Compression  
DS = 10 V, IDSQ 3200mA  
f = 4.40-5.00GHz  
f = 4.40-5.00GHz  
f = 4.40-5.00GHz  
39.5  
40.5  
dBm  
9.0  
10.0  
dB  
dB  
G1dB  
V
Gain Flatness  
±0.6  
G  
VDS = 10 V, IDSQ 3200mA  
Power Added Efficiency at 1dB Compression  
35  
%
PAE  
Id1dB  
VDS = 10 V, IDSQ 3200mA  
f = 4.40-5.00GHz  
Drain Current at 1dB Compression  
f = 4.40-5.00GHz  
3300  
3800  
mA  
Output 3rd Order Intermodulation Distortion  
f = 10 MHz 2-Tone Test; Pout = 29.5 dBm S.C.L2  
-43  
-46  
dBc  
IM3  
VDS = 10 V, IDSQ 65% IDSS  
f = 5.00GHz  
Saturated Drain Current  
VDS = 3 V, VGS = 0 V  
5800  
-2.5  
2.5  
6400  
-4.0  
3.0  
mA  
V
oC/W  
IDSS  
VP  
Pinch-off Voltage  
Thermal Resistance3  
VDS = 3 V, IDS = 60 mA  
RTH  
Note: 1. Tested with 50 Ohm gate resistor.  
2. S.C.L. = Single Carrier Level.  
3. Overall Rth depends on case mounting.  
ABSOLUTE MAXIMUM RATING1,2  
SYMBOLS  
Vds  
Vgs  
Ids  
PARAMETERS  
CONTINUOUS2  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
10V  
-4.5V  
Idss  
Forward Gate Current  
Input Power  
120mA  
Igsf  
@ 3dB Compression  
150 oC  
Pin  
Channel Temperature  
Storage Temperature  
Total Power Dissipation  
Tch  
-65 to +150 oC  
Tstg  
Pt  
42W  
Note: 1. Exceeding any of the above ratings may result in permanent damage.  
2. Exceeding any of the above ratings may reduce MTTF below design goals.  
Specifications are subject to change without notice.  
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085  
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com  
page 1 of 2  
Revised July 2007  

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