Datasheet > EIC1415-3

EIC1415-3

更新时间： 2024-02-16 03:09:33

品牌	Logo	应用领域
EXCELICS		/
页数	文件大小	规格书
1页	84K
描述
14.40-15.35GHz 3-Watt Internally Matched Power FET

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EIC1415-3 数据手册

EIC1415-3

UPDATED 11/22/2004

14.40 – 15.35GHz 3-Watt Internally Matched Power FET

FEATURES

•

14.40-15.35 GHz Bandwidth

.060 MIN.

Excelics

EIC1415-3

Input/Output Impedance Matched to 50 Ohms

+34.5 dBm Output Power at 1dB Compression

6.0 dB Power Gain at 1dB Compression

25% Power Added Efficiency

-42 dBc IM3 at Po = 23.5 dBm SCL

Hermetic Metal Flange Package

.650±.008 .512

.319

GATE

DRAIN

.022

.045

.094

.382

.004

.070 ±.008

100% Tested for DC, RF, and R_TH

.129

ALL DIMENSIONS IN INCHES

Caution! ESD sensitive device.

ELECTRICAL CHARACTERISTICS (T_a= 25°C)

SYMBOL

P_1dB

PARAMETERS/TEST CONDITIONS¹

Output Power at 1dB Compression f = 14.40-15.35GHz

MIN

TYP

MAX

UNITS

33.5

34.5

dBm

_DS= 10 V, I_DSQ≈ 800mA

Gain at 1dB Compression

V_DS= 10 V, I_DSQ≈ 800mA

Gain Flatness

f = 14.40-15.35GHz

G_1dB

5.0

6.0

±0.6

∆G

_DS= 10 V, I_DSQ≈ 800mA

Power Added Efficiency at 1dB Compression

_DS= 10 V, I_DSQ≈ 800mA f = 14.40-15.35GHz

PAE

Id_1dB

Drain Current at 1dB Compression f = 14.40-15.35GHz

900

1100

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 23.5 dBm S.C.L²

IM3

-38

-42*

dBc

V_DS= 10 V, I_DSQ≈ 65% IDSS

f = 15.35GHz

I_DSS

V_P

Saturated Drain Current

V_DS= 3 V, V_GS= 0 V

1400

-2.5

8.0

1800

-4.0

9.0

^oC/W

Pinch-off Voltage

Thermal Resistance³

_DS= 3 V, I_DS= 15 mA

R_TH

Notes:

Tested with 100 Ohm gate resistor.

These devices are available screened for IM3 performance. Please contact factory with your requirement.

S.C.L. = Single Carrier Level.

Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION^1,2

SYMBOL

V_DS

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Drain Current

VALUE

10 V

V_GS

-4.5 V

I_DS

IDSS

I_GSF

Forward Gate Current

Input Power

30 mA

P_IN

@ 3dB compression

14 W

P_T

Total Power Dissipation

Channel Temperature

Storage Temperature

T_CH

150°C

T_STG

-65/+150°C

Notes:

Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.

Bias conditions must also satisfy the following equation P_T< (T_CH–T_PKG)/R_TH; where T_PKG= temperature of package, and P_T= (V_DS* I_DS) – (P_OUT– P_IN).

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com

page 1 of 1

Revised December 2004

中文翻译

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与EIC1415-3相关器件

型号	品牌	获取价格	描述	数据表
EIC1415-4	EXCELICS	获取价格	14.40-15.40GHz 4-Watt Internally-Matched Power FET
EIC1415-4NH	EXCELICS	获取价格	14.40-15.40GHz 4-Watt Internally-Matched Power FET
EIC1415A-4	EXCELICS	获取价格	14.40-15.40GHz 4-Watt Internally Matched Power FET
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