DTD113E

更新时间： 2024-01-30 11:39:26

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关
页数	文件大小	规格书
12页	155K
描述
NPN SILICON BIAS RESISTOR TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册
替代型号

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DTD113E 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.8	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	56	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.3 W
子类别：	BIP General Purpose Small Signal	表面贴装：	NO
晶体管元件材料：	SILICON	Base Number Matches：	1

DTD113E 数据手册

Preferred Devices

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base–emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the TO–92

package which is designed for through hole applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR

TRANSISTOR

COLLECTOR

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

BASE

CEO

Vdc

100

mAdc

EMITTER

Total Power Dissipation

(1.)

@ T = 25°C

350

Derate above 25°C

2.81

mW/°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to

Ambient (surface mounted)

357

°C/W

Operating and Storage

Temperature Range

T , T

–55 to

+150

°C

stg

Maximum Temperature for

Soldering Purposes,

Time in Solder Bath

260

°C

Sec

CASE 29

TO–92 (TO–226)

STYLE 1

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

5000/Box

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

DTC114E

DTC124E

DTC144E

DTC114Y

DTC114T

DTC143T

DTD113E

DTC123E

DTC143E

DTC143Z

4.7

1.0

2.2

4.7

∞

Preferred devices are recommended choices for future use

and best overall value.

∞

1.0

2.2

4.7

1. Device mounted on a FR–4 glass epoxy printed circuit board using the

minimum recommended footprint.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

May, 2000 – Rev. 0

DTC114E/D

12 3 4 5 6 7...12

中文翻译

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DTD113E 替代型号

型号	品牌	替代类型	描述	数据表
MUN2230T1G	ONSEMI	类似代替	Bias Resistor Transistors
MUN2230T1	ONSEMI	类似代替	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2230T1	LRC	功能相似	Bias Resistor Transistor

与DTD113E相关器件

型号	品牌	获取价格	描述	数据表
DTD113EA	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ATR, 3
DTD113EC	ROHM	获取价格	DTD113EC是电阻内置型晶体管。偏置用电阻由薄膜电阻构成，由于采用完全绝缘，可将输入向
DTD113ECHZG	ROHM	获取价格	DTD113ECHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。
DTD113ECHZGT116	ROHM	获取价格	Small Signal Bipolar Transistor,
DTD113ECT116	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL
DTD113EF	ROHM	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3
DTD113EK	ROHM	获取价格	Digital transistors (built-in resistors)
DTD113EK_09	ROHM	获取价格	500mA / 50V Digital transistors (with built-in resistors)
DTD113EK_1	ROHM	获取价格	500mA / 50V Digital transistors (with built-in resistors)
DTD113EKT146	ROHM	获取价格	NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

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