是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.61 |
Is Samacsys: | N | 其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 33 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.3 W |
认证状态: | Not Qualified | 子类别: | BIP General Purpose Small Signal |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD113EK | ROHM |
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Digital transistors (built-in resistors) | |
DTD113EK_09 | ROHM |
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500mA / 50V Digital transistors (with built-in resistors) | |
DTD113EK_1 | ROHM |
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500mA / 50V Digital transistors (with built-in resistors) | |
DTD113EKT146 | ROHM |
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NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) | |
DTD113EKT147 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
DTD113EKT246 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, | |
DTD113EL | ETC |
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TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SIP | |
DTD113ELTL2 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 | |
DTD113ELTL3 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTL, 3 | |
DTD113EN | ETC |
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TRANSISTOR | TO-92 |