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DTD113EK_1 PDF预览

DTD113EK_1

更新时间: 2024-01-26 15:30:59
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
3页 69K
描述
500mA / 50V Digital transistors (with built-in resistors)

DTD113EK_1 数据手册

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DTD113EK / DTD113ES  
Transistors  
500mA / 50V Digital transistors  
(with built-in resistors)  
DTD113EK / DTD113ES  
zApplications  
zExternal dimensions (Unit : mm)  
Inverter, Interface, Driver  
2.9  
1.1  
0.8  
DTD113EK  
0.4  
zFeatures  
( )  
3
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
( )  
2
( )  
1
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
3) Only the on / off conditions need to be set for  
operation, making the device design easy.  
0.95 0.95  
0.15  
1.9  
(1) GND  
(2) IN  
(3) OUT  
Each lead has same dimension  
Abbreviated symbol : F21  
ROHM : SMT3  
EIAJ : SC-59  
DTD113ES  
4.0  
2.0  
zStructure  
NPN epitaxial planar silicon transistor  
(Resistor built-in type)  
0.45  
2.5  
zPackage specifications  
0.45  
0.5  
5.0  
(1) GND  
(2) OUT  
(3) IN  
Package  
SMT3  
SPT  
(1) (2) (3)  
ROHM : SPT  
EIAJ : SC-72  
Packaging type  
Code  
Taping Taping  
Abbreviated symbol : D113ES  
T146  
3000  
TP  
5000  
Part No.  
Basic ordering unit (pieces)  
DTD113EK  
DTD113ES  
zAbsolute maximum ratings (Ta=25°C)  
zEquivalent circuit  
Limits  
Parameter  
Symbol  
Unit  
DTD113EK DTD113ES  
OUT  
R1  
IN  
Supply voltage  
V
CC  
IN  
50  
10 to +10  
500  
V
V
R2  
Input voltage  
V
GND  
OUT  
Output current  
I
C
mA  
mW  
C
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
200  
300  
IN  
150  
55 to +150  
GND  
Tstg  
C
R1=R2=1.0kΩ  
Rev.B  
1/2  

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