生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | HTS代码: | 8541.21.00.95 |
风险等级: | 5.61 | 其他特性: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 82 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | NPN | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD113Z-AL3-6-R | UTC |
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NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD113Z-AL3-R | UTC |
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Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN | |
DTD113Z-AN3-R | UTC |
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Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-523, 3 PIN | |
DTD113ZC | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
DTD113ZCHZG | ROHM |
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DTD113ZCHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 | |
DTD113ZCHZGT116 | ROHM |
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Small Signal Bipolar Transistor, | |
DTD113ZCT116 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL | |
DTD113ZCT117 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL | |
DTD113ZF | ETC |
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TRANSISTOR | 50V V(BR)CEO | 500MA I(C) | SC-71 | |
DTD113ZFC1 | ROHM |
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Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, FTR, 3 |