生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.61 | 其他特性: | DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 10 |
最大集电极电流 (IC): | 0.5 A | 集电极-发射极最大电压: | 50 V |
配置: | SINGLE WITH BUILT-IN RESISTOR | 最小直流电流增益 (hFE): | 56 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 0.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
DTD113Z-AE3-6-R | UTC |
获取价格 |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD113Z-AE3-G-R | UTC |
获取价格 |
Transistor | |
DTD113Z-AE3-O-R | UTC |
获取价格 |
Transistor | |
DTD113Z-AE3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN | |
DTD113Z-AL3-6-R | UTC |
获取价格 |
NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) | |
DTD113Z-AL3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN | |
DTD113Z-AN3-R | UTC |
获取价格 |
Small Signal Bipolar Transistor, 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-523, 3 PIN | |
DTD113ZC | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, | |
DTD113ZCHZG | ROHM |
获取价格 |
DTD113ZCHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 | |
DTD113ZCHZGT116 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, |