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DTD113EK_09 PDF预览

DTD113EK_09

更新时间: 2024-11-18 06:54:51
品牌 Logo 应用领域
罗姆 - ROHM 晶体电阻器数字晶体管
页数 文件大小 规格书
3页 137K
描述
500mA / 50V Digital transistors (with built-in resistors)

DTD113EK_09 数据手册

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500mA / 50V Digital transistors  
(with built-in resistors)  
DTD113EK  
Applications  
Dimensions (Unit : mm)  
Inverter, Interface, Driver  
2.9  
1.1  
0.8  
DTD113EK  
0.4  
Features  
( )  
3
1)Built-in bias resistors enable the configuration of an inverter  
circuit without connecting external input resistors (see  
equivalent circuit).  
2)The bias resistors consist of thin-film resistors with complete  
isolation to allow negative biasing of the input. They also have  
the advantage of almost completely eliminating parasitic  
effects.  
( )  
( )  
1
2
0.95 0.95  
0.15  
1.9  
(1) GND  
(2) IN  
(3) OUT  
Each lead has same dimension  
Abbreviated symbol : F21  
ROHM : SMT3  
EIAJ : SC-59  
3)Only the on / off conditions need to be set for operation,  
making the device design easy.  
Structure  
Inner circuit  
NPN epitaxial planar silicon transistor  
(Resistor built-in type)  
OUT  
GND  
R
1
IN  
R
2
Packaging specifications  
Package  
SMT3  
Taping  
T146  
Packaging type  
Code  
OUT  
GND  
IN  
Part No.  
3000  
Basic ordering unit (pieces)  
DTD113EK  
R1=R2=1.0kΩ  
Absolute maximum ratings (Ta=25C)  
Limits  
DTD113EK  
50  
Parameter  
Symbol  
Unit  
Supply voltage  
VCC  
V
V
Input voltage  
VIN  
10 to +10  
500  
Output current  
IC  
mA  
mW  
C
Power dissipation  
Junction temperature  
Storage temperature  
Pd  
Tj  
200  
150  
Tstg  
55 to +150  
C
www.rohm.com  
2009.06 - Rev.C  
1/2  
c
2009 ROHM Co., Ltd. All rights reserved.  

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