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DTD113EK PDF预览

DTD113EK

更新时间: 2024-11-17 22:29:55
品牌 Logo 应用领域
罗姆 - ROHM 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
2页 63K
描述
Digital transistors (built-in resistors)

DTD113EK 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.6其他特性:DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):33
JESD-30 代码:R-PDSO-G3JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DTD113EK 数据手册

 浏览型号DTD113EK的Datasheet PDF文件第2页 
Transistors  
Digital transistors (built-in resistors)  
DTD113EK / DTD113ES  
FFeatures  
FExternal dimensions (Units: mm)  
1) Built-in bias resistors enable the  
configuration of an inverter circuit  
without connecting external input  
resistors (see equivalent circuit).  
2) The bias resistors consist of thin-  
film resistors with complete isola-  
tion to allow negative biasing of the  
input. They also have the advan-  
tage of almost completely eliminat-  
ing parasitic effects.  
3) Only the on/off conditions need to  
be set for operation, making device  
design easy.  
FStructure  
NPN digital transistor  
(Built-in resistor type)  
FAbsolute maximum ratings (Ta = 25_C)  
FEquivalent circuit  
(96-354-D113E)  
447  

DTD113EK 替代型号

型号 品牌 替代类型 描述 数据表
RN1421 TOSHIBA

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NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver cir

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