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MUN2230T1G PDF预览

MUN2230T1G

更新时间: 2024-01-26 16:51:36
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
18页 161K
描述
Bias Resistor Transistors

MUN2230T1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SC-59
包装说明:LEAD FREE, CASE 318D-04, SC-59, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.36
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):3JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:NOT SPECIFIED
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:COMMERCIAL
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MUN2230T1G 数据手册

 浏览型号MUN2230T1G的Datasheet PDF文件第2页浏览型号MUN2230T1G的Datasheet PDF文件第3页浏览型号MUN2230T1G的Datasheet PDF文件第4页浏览型号MUN2230T1G的Datasheet PDF文件第5页浏览型号MUN2230T1G的Datasheet PDF文件第6页浏览型号MUN2230T1G的Datasheet PDF文件第7页 
MUN2211T1 Series  
Preferred Devices  
Bias Resistor Transistors  
NPN Silicon Surface Mount Transistors  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC-59 package which is designed for low power surface  
mount applications.  
http://onsemi.com  
NPN SILICON  
BIAS RESISTOR  
TRANSISTORS  
PIN 3  
COLLECTOR  
(OUTPUT)  
Features  
PIN 2  
BASE  
(INPUT)  
ꢀSimplifies Circuit Design  
ꢀReduces Board Space  
R
R
1
2
ꢀReduces Component Count  
ꢀMoisture Sensitivity Level: 1  
PIN 1  
EMITTER  
(GROUND)  
ꢀESD Rating - Human Body Model: Class 1  
- Machine Model: Class B  
ꢀThe SC-59 Package can be Soldered Using Wave or Reflow  
ꢀThe Modified Gull-Winged Leads Absorb Thermal Stress During  
Soldering Eliminating the Possibility of Damage to the Die  
ꢀPb-Free Packages are Available  
3
SC-59  
CASE 318D  
STYLE 1  
2
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
MARKING DIAGRAM  
Rating  
Collector‐Base Voltage  
Collector‐Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
V
CEO  
50  
Vdc  
8xꢀMꢀG  
G
I
C
100  
mAdc  
1
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
8x = Device Code (Refer to page 2)  
= Date Code*  
Total Device Dissipation  
T = 25°C  
Derate above 25°C  
P
230 (Note 1)  
338 (Note 2)  
1.8 (Note 1)  
2.7 (Note 2)  
mW  
D
M
A
G = Pb-Free Package  
(Note: Microdot may be in either location)  
°C/W  
°C/W  
°C/W  
°C  
*Date Code orientation may vary depending  
upon manufacturing location.  
Thermal Resistance, Junction‐to‐Ambient  
R
540 (Note 1)  
370 (Note 2)  
q
JA  
Thermal Resistance, Junction‐to‐Lead  
R
264 (Note 1)  
287 (Note 2)  
q
JL  
ORDERING INFORMATION  
See detailed ordering and shipping information in the table on  
page 2 of this data sheet.  
Junction and Storage Temperature  
Range  
T , T  
J
-ā55 to +150  
stg  
DEVICE MARKING INFORMATION  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR-4 @ Minimum Pad.  
See specific marking information in the Device Marking and  
Resistor Values table on page 2 of this data sheet.  
Preferred devices are recommended choices for future use  
2. FR-4 @ 1.0 x 1.0 inch Pad.  
and best overall value.  
©ꢀ Semiconductor Components Industries, LLC, 2007  
July, 2007 - Rev. 13  
1
Publication Order Number:  
MUN2211T1/D  
 

MUN2230T1G 替代型号

型号 品牌 替代类型 描述 数据表
DTD113E ONSEMI

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NPN SILICON BIAS RESISTOR TRANSISTOR
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Bias Resistor Transistor
MUN2230T1 ONSEMI

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NPN SILICON BIAS RESISTOR TRANSISTOR

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