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MUN2231T1G PDF预览

MUN2231T1G

更新时间： 2024-01-01 22:54:10
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管数字晶体管开关光电二极管
页数 文件大小 规格书
10页 127K
描述
Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k

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中文翻译

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MUN2231T1G 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SC-59
包装说明：LEAD FREE, CASE 318D-04, SC-59, 3 PIN针数：3
Reach Compliance Code：unknown风险等级：5.37
Is Samacsys：N其他特性：BUILT-IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：8
JESD-30 代码：R-PDSO-G3JESD-609代码：e3
湿度敏感等级：NOT SPECIFIED元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MUN2231T1G 数据手册

 浏览型号MUN2231T1G的Datasheet PDF文件第2页浏览型号MUN2231T1G的Datasheet PDF文件第3页浏览型号MUN2231T1G的Datasheet PDF文件第4页浏览型号MUN2231T1G的Datasheet PDF文件第5页浏览型号MUN2231T1G的Datasheet PDF文件第6页浏览型号MUN2231T1G的Datasheet PDF文件第7页 
MUN2231, MMUN2231L,  
MUN5231, DTC123EE,  
DTC123EM3  
Digital Transistors (BRT)  
R1 = 2.2 kW, R2 = 2.2 kW  
http://onsemi.com  
PIN CONNECTIONS  
NPN Transistors with Monolithic Bias  
Resistor Network  
PIN 3  
COLLECTOR  
(OUTPUT)  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a base−  
emitter resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space.  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
MARKING DIAGRAMS  
• Simplifies Circuit Design  
• Reduces Board Space  
SC−59  
CASE 318D  
STYLE 1  
• Reduces Component Count  
XX MG  
• S and NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC-Q101  
Qualified and PPAP Capable  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
SOT−23  
CASE 318  
STYLE 6  
XXX MG  
Compliant  
G
MAXIMUM RATINGS (T = 25°C)  
A
1
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
SC−70/SOT−323  
CASE 419  
V
V
CBO  
CEO  
XX MG  
G
50  
Vdc  
STYLE 3  
1
I
C
100  
12  
mAdc  
Vdc  
SC−75  
CASE 463  
STYLE 1  
V
IN(fwd)  
XX M  
XX M  
Input Reverse Voltage  
V
10  
Vdc  
IN(rev)  
1
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
SOT−723  
CASE 631AA  
STYLE 1  
1
XXX  
M
G
=
=
=
Specific Device Code  
Date Code*  
Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending  
upon manufacturing location.  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 − Rev. 0  
DTC123E/D  
1234567...10

中文翻译

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MUN2231T1G 替代型号

型号 品牌 替代类型 描述 数据表
MMUN2231LT1G ONSEMI

类似代替

 Bias Resistor Transistor
PDTC123ET,215 NXP

功能相似

 PDTC123E series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO-236 3
PDTC123ET NXP

功能相似

 NPN resistor-equipped transistor

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