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MUN2232T3 PDF预览

MUN2232T3

更新时间： 2024-01-18 16:00:05
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
39页 374K
描述
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, 3 PIN

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MUN2232T3 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：SC-59
包装说明：SMALL OUTLINE, R-PDSO-G3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.79其他特性：BUILT IN BIAS RESISTOR RATIO IS 1
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：15
JESD-30 代码：R-PDSO-G3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

MUN2232T3 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon Surface Mount Transistor with  
Monolithic Bias Resistor Network  
Motorola Preferred Devices  
This new series of digital transistors is designed to replace a single device and its  
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single  
transistor with a monolithic bias network consisting of two resistors; a series base  
resistor and a base–emitter resistor. The BRT eliminates these individual components  
by integrating them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC–59 package which is designed  
for low power surface mount applications.  
NPN SILICON  
BIAS RESISTOR  
TRANSISTOR  
•
•
•
•
Simplifies Circuit Design  
Reduces Board Space  
PIN3  
COLLECTOR  
(OUTPUT)  
Reduces Component Count  
The SC–59 package can be soldered using wave or reflow.  
The modified gull–winged leads absorb thermal stress during  
soldering eliminating the possibility of damage to the die.  
3
R1  
R2  
2
1
PIN2  
BASE  
(INPUT)  
•
Available in 8 mm embossed tape and reel  
Use the Device Number to order the 7 inch/3000 unit reel.  
CASE 318D–03, STYLE 1  
(SC–59)  
PIN1  
EMITTER  
(GROUND)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector–Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
Collector–Emitter Voltage  
Collector Current  
V
50  
Vdc  
I
C
100  
mAdc  
(1)  
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
*200  
1.6  
mW  
mW/°C  
A
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction–to–Ambient (surface mounted)  
Operating and Storage Temperature Range  
R
625  
°C/W  
°C  
θJA  
T , T  
J
–65 to +150  
stg  
Maximum Temperature for Soldering Purposes,  
Time in Solder Bath  
T
L
260  
10  
°C  
Sec  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
MUN2211T1  
MUN2212T1  
MUN2213T1  
MUN2214T1  
MUN2215T1  
8A  
8B  
8C  
8D  
8E  
8F  
8G  
8H  
8J  
10  
22  
47  
10  
10  
10  
22  
47  
47  
∞
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
(2)  
MUN2216T1  
MUN2230T1  
MUN2231T1  
MUN2232T1  
MUN2233T1  
MUN2234T1  
4.7  
1.0  
2.2  
4.7  
4.7  
22  
∞
1.0  
2.2  
4.7  
47  
47  
8K  
8L  
1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint.  
2. New devices. Updated curves to follow in subsequent data sheets.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 4  
2–738  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
1234567...39

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