MUN2236T1G

更新时间： 2024-01-03 14:13:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体数字晶体管
页数	文件大小	规格书
9页	121K
描述
Digital Transistors (BRT) R1 = 100 k, R2 = 100 k

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MUN2236T1G 技术参数

是否无铅：	不含铅	生命周期：	Active
零件包装代码：	SC-59	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.35
其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.338 W
认证状态：	Not Qualified	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

MUN2236T1G 数据手册

MUN2236, MUN5236,

DTC115EE, DTC115EM3

Digital Transistors (BRT)

R1 = 100 kW, R2 = 100 kW

NPN Transistors with Monolithic Bias

Resistor Network

http://onsemi.com

PIN CONNECTIONS

This series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base−

emitter resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space.

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

BASE

(INPUT)

PIN 2

EMITTER

(GROUND)

Features

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

MARKING DIAGRAMS

SC−59

CASE 318D

STYLE 1

• S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC-Q101

Qualified and PPAP Capable

XX MG

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

SC−70/SOT−323

CASE 419

XX MG

MAXIMUM RATINGS (T = 25°C)

STYLE 3

Rating

Collector−Base Voltage

Collector−Emitter Voltage

Collector Current − Continuous

Input Forward Voltage

Symbol

Max

Unit

Vdc

SC−75

CASE 463

STYLE 1

CBO

CEO

XX M

Vdc

100

mAdc

Vdc

SOT−723

CASE 631AA

STYLE 1

IN(fwd)

Input Reverse Voltage

Vdc

IN(rev)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

XXX

Specific Device Code

Date Code*

Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

Publication Order Number:

August, 2012 − Rev. 0

DTC115E/D

12 3 4 5 6 7...9

中文翻译

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与MUN2236T1G相关器件

型号	品牌	获取价格	描述	数据表
MUN2237	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = 22 k
MUN2237	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor
MUN2237T1	LRC	获取价格	Bias Resistor Transistor
MUN2237T1	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2237T1G	ONSEMI	获取价格	NPN SILICON BIAS RESISTOR TRANSISTOR
MUN2238	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 2.2 k, R2 = k
MUN2238_16	ONSEMI	获取价格	Digital Transistors (BRT)
MUN2238T1G	ONSEMI	获取价格	Digital Transistors (BRT)
MUN2240	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 47 k, R2 = k
MUN2240	WEITRON	获取价格	NPN Silicon Bias Resistor Transistor

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